The outstanding electrical, mechanical and chemical properties of graphene make it attractive for applications in flexible electronics. However, efforts to make transparent conducting films from graphene have been hampered by the lack of efficient methods for the synthesis, transfer and doping of graphene at the scale and quality required for applications. Here, we report the roll-to-roll production and wet-chemical doping of predominantly monolayer 30-inch graphene films grown by chemical vapour deposition onto flexible copper substrates. The films have sheet resistances as low as approximately 125 ohms square(-1) with 97.4% optical transmittance, and exhibit the half-integer quantum Hall effect, indicating their high quality. We further use layer-by-layer stacking to fabricate a doped four-layer film and measure its sheet resistance at values as low as approximately 30 ohms square(-1) at approximately 90% transparency, which is superior to commercial transparent electrodes such as indium tin oxides. Graphene electrodes were incorporated into a fully functional touch-screen panel device capable of withstanding high strain.

We developed means to produce wafer scale, high-quality graphene films as large as 3 in. wafer size on Ni and Cu films under ambient pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1100 +/- 70 and 550 +/- 50 cm(2)/(V s) at drain bias of -0.75 V, respectively. The piezo-resistance gauge factor of strain sensor was approximately 6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.

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Strong damping enhancement in nm-thick yttrium iron garnet (YIG) films due to Pt capping layers was observed. This damping is substantially larger than the expected damping due to conventional spin pumping, is accompanied by a shift in the ferromagnetic resonance field, and can be suppressed by the use of a Cu spacer in between the YIG and Pt films. The data indicate that such damping may originate from the ferromagnetic ordering in Pt atomic layers near the YIG/Pt interface and the dynamic exchange coupling between the ordered Pt spins and the spins in the YIG film.

Growth of nm-thick yttrium iron garnet films and ferromagnetic resonance (FMR) linewidth properties in the films are reported. The films were grown on gadolinium gallium garnet substrates by pulsed laser deposition (PLD). Films in the 5–35 nm thickness range showed a (111) orientation and a surface roughness between 0.1 and 0.3 nm. The 10 nm films showed a 10 GHz FMR linewidth of about 6 Oe and a damping constant of 3.2 × 10−4. The FMR linewidth increases with both the surface roughness and the surface Fe deficiency. Thicker films exhibit a smaller FMR linewidth and a lower damping constant.