Wafer-Scale Synthesis and Transfer of Graphene Films

Abstract

We developed means to produce wafer scale, high-quality graphene films as large as 3 in. wafer size on Ni and Cu films under ambient pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1100 +/- 70 and 550 +/- 50 cm(2)/(V s) at drain bias of -0.75 V, respectively. The piezo-resistance gauge factor of strain sensor was approximately 6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.

Rational design of a binary metal alloy for chemical vapour deposition growth of uniform single-layer graphene

“…The extracted electron carrier mobility was 973 cm 2 V − 1 s − 1 (ref. 28), which was consistent with the graphene grown by the conventional CVD on a Ni surface 2,7 .…”

“…G raphene, a zero-bandgap semimetal with both excellent optical transparency and electrical conductivity, is a promising material for nanoscale electronics and flexible macroelectronic devices 1,2 . Because the various physicochemical properties of graphene are sensitive to its thickness [3][4][5] , the capability of synthesizing uniform graphene with well-controlled layer numbers has been one of the major challenges in graphene research 6 .…”

In situ control of dewetting of Cu thin films in graphene chemical vapor deposition

“…Cu) for graphene CVD, researchers tend to increase the hole incubation time (t0), generally by using thick films [10][11][12][13][14][15] (≥500 nm). As a matter of fact, thicker Cu films can be simply treated as foils, then applying the same deposition conditions, with comparable results [10].…”

High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics

“…[5][6][7] There are two general approaches for fabricating graphene devices over large areas: one that employs graphene grown directly on SiC wafers 8 and another that transfers graphene films synthesized on metal layers to other useful substrates. 9,10 The latter approach is attractive because of the special attributes of graphene films, such as flexible/stretchable device fabrication and the possibility of fabrication over large areas. This approach has produced device arrays on rigid insulating wafers and is scalable to a wafer size.…”