We have investigated an etch-stop process and fabricated the ferroelectric gate transistor without damage of source and drain regions using etching selectivity between etch rates of SrBi2Ta2O9 (SBT) and CeO2. The SBT and CeO2 were etched with inductively coupled plasma (ICP) reactive ion etching at various Ar/Cl2 gas mixing ratios, ICP powers, and rf bias powers. The etching selectivity of SBT/CeO2 was 6.8 and the vertical etching angle of SBT was 82° at the condition of 50% Cl2 concentration with the ICP power of 900 W and the rf bias power of 100 W. The characteristics of devices fabricated with an etch-stop process showed that there was no degradation of the ferroelectric characteristics and on/off ratio of programmable operation was 104.
Ni(60Å)/Cu film possessing perpendicular magnetic anisotropy (PMA) changes its easy
direction into the plane by ion irradiation, due to the relaxation of the strain. By fixing our eyes upon
this magnetic property, the magnetic patterning of Ni(60Å)/Cu film using 40 keV O ion irradiation
was performed through the photo-resist (PR) mask having 10㎛ x 10 ㎛pattern sizes to pattern the
magnetic film. After the PR mask removal of an irradiated film, the magnetic properties were
investigated by the magneto-optic Kerr effect and the formation of magnetic pattern was observed by
the magnetic force microscopy. The PMA magnetic patterning of epitaxial Ni/Cu film was
successfully performed in scale of ㎛ by using ion irradiation, compatible with device process.
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