2D Molybdenum disulfide (MoS2 ) is a promising candidate material for high-speed and flexible optoelectronic devices, but only with low photoresponsivity. Here, a large enhancement of photocurrent response is obtained by coupling few-layer MoS2 with Au plasmonic nanostructure arrays. Au nanoparticles or nanoplates placed onto few-layer MoS2 surface can enhance the local optical field in the MoS2 layer, due to the localized surface plasmon (LSP) resonance. After depositing 4 nm thick Au nanoparticles sparsely onto few-layer MoS2 phototransistors, a doubled increase in the photocurrent response is observed. The photocurrent of few-layer MoS2 phototransistors exhibits a threefold enhancement with periodic Au nanoarrays. The simulated optical field distribution confirms that light can be trapped and enhanced near the Au nanoplates. These findings offer an avenue for practical applications of high performance MoS2 -based optoelectronic devices or systems in the future.

Flexible semiconductor nanomembranes bend into microscale scroll architectures for wide-angle infrared photodetection.

Recently, plasmonics has been central to the manipulation of photons on the subwavelength scale, and superior infrared imagers have opened novel applications in many fields. Here, we demonstrate the first pixel-level plasmonic microcavity infrared photodetector with a single quantum well integrated between metal patches and a reflection layer. Greater than one order of magnitude enhancement of the peak responsivity has been observed. The significant improvement originates from the highly confined optical mode in the cavity, leading to a strong coupling between photons and the quantum well, resulting in the enhanced photo-electric conversion process. Such strong coupling from the localized surface plasmon mode inside the cavity is independent of incident angles, offering a unique solution to high-performance focal plane array devices. This demonstration paves the way for important infrared optoelectronic devices for sensing and imaging.

We demonstrate the existence of an interfacial barrier in blocked impurity band (BIB) detectors using temperature-dependent dark current and corresponding theoretical calculations. Considering the effects of the interfacial barrier, the calculated photoresponse is in good agreement with the experimental results. A dual-excitation model, including the direct excitation over the full barrier and excitation to the band minimum with subsequent tunneling into the blocking layer, is proposed to quantitatively explain the observed photoresponse extension. A concept of extended-mode detection is developed to suggest the option for some selective photoresponse in the terahertz region and open the possibility of extending BIB photoresponse to lower frequency.

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A hybrid structure consisting of a square lattice of gold disk arrays and an overlaying gold film is proposed as an optical coupler for a backside-illuminated quantum well infrared photodetector (QWIP). Finite difference time-domain method is used to numerically simulate the reflection spectra and the field distributions of the hybrid structure combined with the QWIP device. The results show that the electric field component perpendicular to the quantum well is strongly enhanced when the plasmonic resonant wavelength of the hybrid structure coincides with the response one of the quantum well infrared photodetector regardless of the polarization of the incident light. The effect of the diameter and thickness of an individual gold disk on the resonant wavelength is also investigated, which indicates that the localized surface plasmon also plays a role in the light coupling with the hybrid structure. The coupling efficiency can exceed 50 if the structural parameters of the gold disk arrays are well optimized.

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