Efficiency enhancement of infrared light emitting diodes by combination of photonic crystals and surface plasmons

Design of photonic crystals for light‐emitting diodes

“…Right: 30 μm green μ‐PC LED current‐dependent peak wavelength and full width at half maximum (FWHM). Reproduced from refs 92, 93. with permission of Springer and MDPI.…”

“…As a result, the investigation of these composite structures has garnered significant attention from scholars. An infrared LED structure was investigated, built, and described by Li et al 92 This infrared LED structure improved the LEE by efficiently merging a SiO 2 grating structure (also known as a PC structure) with a metal grating. Figure 23A shows a schematic of the system, and from Figure 23B, it can be seen that combining the two grating structures improved the LEE of the infrared emitter by about five times compared to the other two methods.…”

“…As a result, the investigation of these composite structures has garnered significant attention from scholars. An infrared LED structure was investigated, built, and described by Li et al 92 . This infrared LED structure improved the LEE by efficiently merging a SiO 2 grating structure (also known as a PC structure) with a metal grating.…”

GaAs/AlGaAs- and InGaAs/AlGaAs-heterostructures for high-power semiconductor infrared emitters

“…Increase in the luminosity of emitting devices without changing their design is possible as a result of increasing in the internal and external quantum efficiency. To increase the external quantum efficiency, the most common methodology are used, such as the formation of a reflective surface under the active region of the device [4][5][6], photonic crystals [7,8], increasing the surface roughness [9,10] and/or applying antireflection coatings [14]. However, without a good basis, namely the heterostructure with high internal quantum yield, the application of these methodologies will not provide the high performance light emitting diode.…”

GaAs/AlGaAs- и InGaAs/AlGaAs-гетероструктуры для мощных полупроводниковых инфракрасных излучателей

“…Повышение светимости излучающих приборов без изменения их конструкции возможно в результате увеличения внутренней и внешней квантовой эффективности. Для увеличения внешней квантовой эффективности применяются такие наиболее распространенные методики, как формирование отражающей поверхности под активной областью прибора [4][5][6], фотонных кристаллов [7,8], увеличение шероховатости поверхности [9,10] и/или нанесения просветляющих покрытий [11]. Однако без хорошей основы, а именно гетероструктуры с высоким внутренним квантовым выходом, применение этих методик не обеспечит получение светоизлучающего диода с высокими характеристиками.…”