In this article, we present an overview of a focal plane array (FPA) with 640 Â 512 pixels based on the AlGaAs quantum well infrared photodetector (QWIP). The physical principles of the QWIP operation and their parameters for the spectral range of 8-10 μm have been discussed. The technology of the manufacturing FPA based on the QWIP structures with the pixels 384 Â 288 and 640 Â 512 has been demonstrated. The parameters of the manufactured 640 Â 512 FPA with a step of 20 μm have been given. At the operating temperature of 72 K, the temperature resolution of QWIP focal plane arrays is less than 35 mK. The number of defective elements in the matrix does not exceed 0.5%. The stability and uniformity of the FPA have been demonstrated.
Определен внутренн ий квантовый выход люминесценции GaAs/AlGaAs- и InGaAs/AlGaAs-гетероструктур для инфракрасных светодиодов. Исследовано влияние ростовых условий гетероструктур, выращенных методом молекулярно-лучевой эпитаксии и пост-ростового отжига на квантовый выход гетероструктур. Показано, что совокупной оптимизацией данных процессов удается повысить квантовый выход люминесценции исследуемых гетероструктур до 75-80% при умеренной мощности накачки. Ключевые слова: гетероструктуры, кельвиновская зондовая микроскопия, молекулярно-лучевая эпитаксия.
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