We investigated the relative oxidation rates of single-crystalline Si substrates with various orientations to study the formation of thermally grown oxide films on multicrystalline Si at low temperatures in high-pressure water vapor. The oxidation rates depended greatly on the Si substrate orientation, but the increasing pressure did not change the proportion of their relative oxidation ratio even though the oxidation rate was accelerated by the pressure. On the basis of our modeling of the Si surface structure, we consider that the dependence of oxidation ratio on substrate Si orientation depends in turn on interface atomic density for a structure that has one or two Si-O bonds.
We studied the interfacial lattice strain of Si0 2 /Si(100) formed by high-pressure oxidation with extremely asymmetric X-ray diffraction using synchrotron radiation. From the dynamical diffraction calculation, we analyzed that the lattice spacing of oxidized silicon is compressed compared to that of the ideal crystal. By comparing wavelength dependence of integrated intensities of rocking curve obtained by calculations and experiments, we found that the conditions during oxidation influenced the magnitude of the lattice strain. The higher the oxygen pressure was the more compressive strain was introduced. Moreover, for higher temperature, more compressive strain was introduced. The interfacial lattice strain introduced in high pressure oxidation is comparable in magnitude to that introduced in dry oxidation even if the oxidation done at low temperatures.
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