Orientation Dependence of Silicon Oxidation Ratio in High-Pressure Water Vapor

Yamamoto, Naoya; Oshita, Yoshio; Ogura, Atsushi; Yoshinouchi, Atsushi

doi:10.1143/jjap.46.7619

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…Rate constants for these planes are available in [7], and they generally follow an Arrhenius temperature dependency allowing for prediction over a wide range of growth temperatures. However, little literature exists on oxide growth between these crystal planes, and that which does exist presents difficulties in application such as being limited to thin or native oxide layers [8], [9]. The growth conditions ultimately determine the structure of the μHSR shown in Figure 1.…”

Section: Hemispherical Mold Oxidationmentioning

confidence: 99%

Effect of thickness anisotropy on degenerate modes in oxide micro-hemispherical shell resonators

Sorenson

Shao

Ayazi

2013

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS)

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The effect of thickness anisotropy on the degenerate elliptical resonance modes of micro-hemispherical shell resonators (µHSRs) created using the thermal oxidation process is investigated. This anisotropy arises from the variation in wet thermal oxide growth according to the exposed crystal planes of the single-crystal-silicon hemispherical mold used to generate the µHSRs. It is shown that, despite the presence of thickness anisotropy, the degenerate resonance modes of oxide µHSRs can exhibit zero intrinsic frequency split depending on the particular resonance mode and symmetry of the thickness anisotropy imparted from the underlying silicon wafer. Measured results verified by simultaneous electrical excitation on the 0° and 45° axes demonstrate less than 94 Hz intrinsic m=3 frequency split for a 1240 µm oxide µHSR (limited by measurement conditions), which is to the authors' knowledge the smallest as-fabricated frequency split reported to date for any µHSR.

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Section: Hemispherical Mold Oxidationmentioning

confidence: 99%

Effect of thickness anisotropy on degenerate modes in oxide micro-hemispherical shell resonators

Sorenson

Shao

Ayazi

2013

2013 IEEE 26th International Conference on Micro Electro Mechanical Systems (MEMS)

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“…3 In this work, the oxidizing ambient was built using high pressure H 2 O vapor at 550°C. For the SPC poly-Si annealed for 1 h at 2 MPa, the oxide thickness is about 150 Å, which well matched with the x-ray photoelectron spectroscopy results.…”

Section: B Annealing Of Polycrystalline Silicon By Heating With Highmentioning

confidence: 99%

Effects of gate insulator using high pressure annealing on the characteristics of solid phase crystallized polycrystalline silicon thin-film transistors

Kim

Jin

2009

Journal of Applied Physics

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The oxidizing ambient was built using high pressure H2O vapor at 550 °C. For the solid phase crystallization (SPC) polycrystalline silicon (poly-Si) that is annealed for 1 h at 2 MPa, the oxide thickness is about 150 Å. The oxide layer is approximately 90 Å above the original surface of the poly-Si and 60 Å below the original surface. The oxide layer is used as the first gate insulator layer of thin-film transistors (TFTs). The heating at 550 °C with 2 MPa H2O vapor increased the carrier mobility from 17.6 cm2/V s of the conventional SPC process to 30.4 cm2/V s, and it reduced the absolute value of the threshold voltage (Vth) from 4.13 to 3.62 V. The subthreshold swing also decreased from 0.72 to 0.60 V/decade. This improvement is attributed mainly to the reduction in defect density at the oxide/poly-Si interface and in the poly-Si film by the high pressure annealing (HPA) process. Since the realization of excellent performance at the oxide/poly-Si interface and in poly-Si depends on the defect density, the poly-Si having the thermal oxide formed by a combined process of SPC and HPA may be well suited for fabrication of poly-Si TFTs for flat panel displays such as active matrix organic light emitting diodes.

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Orientation Dependence of Silicon Oxidation Ratio in High-Pressure Water Vapor

Cited by 2 publications

References 6 publications

Effect of thickness anisotropy on degenerate modes in oxide micro-hemispherical shell resonators

Effect of thickness anisotropy on degenerate modes in oxide micro-hemispherical shell resonators

Effects of gate insulator using high pressure annealing on the characteristics of solid phase crystallized polycrystalline silicon thin-film transistors

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