Influence of hydrogen, boron, and ion energy on the structure of microcrystalline silicon in plasma-assisted chemical vapor deposition

Oshita, Yoshio; Okitsu, Kazuhiko; Imaizumi, Mitsuru; Yamaguchi, Koji; Yamaguchi, Masafumi; Hara, Tomohiko; Ito, Tadashi; Fukushima, Hiromichi; Ryoji, Makoto; Fujii, Sadao; Kawamura, K.

doi:10.1109/pvsc.2000.916016

Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference - 2000 (Cat. No.00CH37036)

DOI: 10.1109/pvsc.2000.916016

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Influence of hydrogen, boron, and ion energy on the structure of microcrystalline silicon in plasma-assisted chemical vapor deposition

Yoshio Oshita

Kazuhiko Okitsu²,

Mitsuru Imaizumi³

et al.

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Influence of hydrogen, boron, and ion energy on the structure of microcrystalline silicon in plasma-assisted chemical vapor deposition

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