Vertical array records obtained at Kobe Port Island during the Hyogo-ken nanbu earthquake were analyzed. Acceleration records at four different depths were obtained. The peak horizontal acceleration was minimum at the ground surface and increased with depth, whereas, the peak vertical acceleration, the peak horizontal velocity, and displacement all decrease with depth.The de-amplification of the horizontal acceleration was due to non-linear effect of soils.The amplification of the vertical acceleration was caused by small P-wave velocity in the unsaturated fill layer which resulted in a large velocity contrast at the boundary between the unsaturated and saturated layer.Using ground response analysis, the equivalent linear soil parameters were obtained for 50% of the rigidities of the shear wave velocity with PS-logging.A method of synthesis of strong ground motion by summation's aftershock records was applied to simulate the main shock at the ground surface and at a depth at GL-83 m. Synthesized strong motion at GL-83 m compared relatively well to the recorded one. Strong ground motion synthesized at the ground surface indicated twice larger peak acceleration than the observed. The smaller amplitude observed at the ground surface was due to the non-linear effect of soils.
A B S T R A C Twhich contain the main variable parameter. thus accomplishing adtive adjustment of the threshold level.District Beating and Cmling (DE) facilities produce heat in the lump and supply it for the heating and cooling of districts. A fault diagnosis system has been developed to enable DHC facilities to
O B J E C T O F D I A G N O S I Sprovide stable heat supplies and this system has been proved using is a system diagram of the Hakozaki plant for the object of real facilities.diagnosis. These facilities used river water for heat rejectionTo minimize cost. the tvo heat pumps mainly use electric pover at Fig.1 and heat absorption for heat pump for the first time in Japan. ( I 'DHC facilities are provided for public utility. Their purposes are to save energy, to maintain the environment. and to equalize electric pover consumption etc.. They are compased of heat pumps for producing heat, storage tanks for storing hot and chilled rater. rater pumps for supplying buildings vith hot and chilled water. and di s t r i bu t ion pipes.The cooling capability of heat pump, and the condenser pressure are varied by the temperature and flow rate of the cooling water. The supply pumps operating at a particular time and their flow rate are also varied according to the load. Therefore, high sensitivity can not be realized by fault monitoring vith a fixed threshold. making it difficult to detect a malfunction early.night. Of the each four chilled-rater and hot-water pumps, three-are constarst speed pumps which are controlled stepwise. and the other is an inverter pump which strictly controls the supply pressure.Many kinds of faults exist and the requirements of fault diagnosis 1) Check mainly the process. but additionally the machine are as follows.character istks.-2) Predict the fault based on the detected symptom. 3) Guide the administration according to the cause and seriousness of the fault. From this viewpoint. we diagnosed the causes of reduced capability. pressure malfunction. etc., and judged their seriousness.This nev fault diagnosis system uses a causeeffect tree diagraa to find the causes of faults, and introduces.an analytical method for judging the malfunction rate.
We have investigated NH3 plasma pretreatment and SiON deposition for the C face of 4H-silicon carbide (4H-SiC) and characterized interface properties. It is revealed that the NH3 plasma pretreatment effectively reduces interface state density and increases field-effect mobility on the C face of 4H-SiC. Both nitrogen and hydrogen passivate interface traps, resulting in improved electron channel mobility. Although the threshold voltage was high due to electron traps in the SiON deposition layer, the nitrided layer formed by NH3 plasma pretreatment suppressed the influence of coulomb scattering of the trapped electrons in the deposited SiON layer, leading to increased field-effect mobility.
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