NH₃Plasma Pretreatment of 4H-SiC(000\bar1) Surface for Reduction of Interface States in Metal–Oxide–Semiconductor Devices

Abstract

We have investigated NH3 plasma pretreatment and SiON deposition for the C face of 4H-silicon carbide (4H-SiC) and characterized interface properties. It is revealed that the NH3 plasma pretreatment effectively reduces interface state density and increases field-effect mobility on the C face of 4H-SiC. Both nitrogen and hydrogen passivate interface traps, resulting in improved electron channel mobility. Although the threshold voltage was high due to electron traps in the SiON deposition layer, the nitrided layer formed by NH3 plasma pretreatment suppressed the influence of coulomb scattering of the trapped electrons in the deposited SiON layer, leading to increased field-effect mobility.

A Revival of Waste: Atmospheric Pressure Nitrogen Plasma Jet Enhanced Jumbo Silicon/Silicon Carbide Composite in Lithium Ion Batteries

“…Since JSC is highly susceptible to surface oxidation, wafer slicing waste contained numerous organic bonds because of the cleaning process. In addition to the described characteristics of the peaks, the effects of Si 2p after N-APPJ treatment were determined using Si–N x (101.48 eV), Si–N 1.33 (102.34 eV), Si–O x (103.58 eV), and N–Si–O (104.35 eV), as shown in Figure e and f, indicating the replacement of organic bonds (−OH) x with the doped N, which is consistent with the results of the N spectra and those of previous studies. ,,− Table S1 shows a summarized table of XPS data for all electrodes for N 1s and Si 2p.…”

Reliability and Stability Improvement of MOS Capacitors via Nitrogen–Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

“…22 Iwasaki et al revealed that NH 3 plasma pretreatment significantly decreased D it due to the passivation of the interface traps by nitrogen and the termination of dangling bonds by hydrogen. 23 ment not only significantly eliminates near-interface traps in the oxide but also effectively terminates Si dangling bonds. 24 Recently, there has been a process of improving device stability by NO annealing treatment of the SiC surface prior to dielectric deposition.…”

“…Indeed, the existence of initial surface defects (i.e., dangling bonds, C- or O-contaminants and adsorbates, C-related point defects) is also one of the main reasons for the poor quality of the SiC/SiO 2 interface. − Several publications have reported the methods to improve the SiC surface characteristics, involving hydrogen/nitrogen plasma treatment, , direct atomic source nitridation treatment, and ultraviolet ozone treatment . Iwasaki et al revealed that NH 3 plasma pretreatment significantly decreased D it due to the passivation of the interface traps by nitrogen and the termination of dangling bonds by hydrogen . Nakashima et al demonstrated that the nitrogen electron cyclotron resonance (ECR) plasma pretreatment not only significantly eliminates near-interface traps in the oxide but also effectively terminates Si dangling bonds .…”

Об Адсорбции Газов На Карбиде Кремния: Простые Оценки

“…В настоящей работе используются первый и третий подходы. В качестве адсорбатов рассмотрены N 2 и NH 3 и атомы N. Отметим, что проблема взаимодействия газов N 2 и NH 3 с поверхностью SiC возникла в связи с изучением интерфейса SiO 2 /SiC [13][14][15][16][17]. При этом имеет место диссоциация молекул.…”

“…Найти какие-либо работы непосредственно по адсорбции N 2 , N и NH 3 на SiC не удалось. Поэтому ниже мы будем основываться на косвенных данных и некоторых предположениях, так как экстраполировать на случай поверхности результаты работ [13][14][15][16][17], полученные для объема, не корректно.…”