In this paper, a method of improving the characteristics of complementary metal-oxide semiconductor (CMOS) on Si(111) wafers is presented. The combination of fluorine (F) implantation and long-time hydrogen annealing was applied to (111)CMOS devices for the first time. The interface state density in a (111)MOS device was dramatically reduced to 8% (2:74 Â 10 10 cm À2 ÁeV À1 ) of the original value (3:40 Â 10 11 cm À2 ÁeV À1 ). As a result, field-effect mobility was increased by about 70% and the 1/f noise level was halved as compared with (111)CMOS devices without the improvement method. The performance of improved (111)CMOS devices was comparable to that of (100)CMOS devices fabricated in the same batch process. The improvement effect of this method is much better than that of our previous method which included only longtime H 2 annealing.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.