No abstract

Barium tetratitanate, BaTi409, combined with ruthenium oxide shows stable photocatalytic activity for the stoichiometric production of hydrogen and oxygen from water.

Carbon nanotube single-hole transistors operating at room temperature were realized. To obtain large charging energy, a 25-nm-long carbon nanotube channel was formed by shadow evaporation for small gate capacitance and an insulator was inserted between the channel and electrodes for small tunnel capacitances. A significantly small gate capacitance (0.06 aF) and a small tunnel capacitance (0.3 aF) were obtained. The estimated charging energy of a carbon nanotube single quantum dot was 108 meV. Drain current oscillation as a function of gate voltage was clearly observed while typical p-type field effect transistor characteristics were obtained for the device without insulator. These results indicate that the small tunnel capacitance is necessary for the room-temperature-operating carbon nanotube single-charge transistors.

A novel low-power gate driver architecture was developed for large 8 K 120 Hz liquid crystal display panel. For this application, not only high-speed driving but also low power consumption is required. We employed a high mobility In-Ga-Zn-O, dual V GL level driving method, and gate driver circuit driven by DC supply. The simulation results show that our proposals meet 8 K 120 Hz driving requirements. Also, we have fabricated a prototype panel and confirmed both high-speed driving and low power consumption. FIGURE 4 -Timing chart (four-phase clock). Journal of the SID 26/5, 2018 305 FIGURE 7 -Block diagram of the shift register.

Carbon nanotube field-effect transistors (CNT-FETs) with thin tunnel barriers were investigated, and room-temperature single-electron transistor (SET) operation was realized. A thin tunnel barrier layer, which was an oxidized aluminum layer, was inserted between nanotube channels and electrodes. Gate voltage dependences of the drain current were measured at 290 K. Clear Coulomb oscillations could be observed for the sample with the tunnel barrier layer, while only conventional ambipolar characteristics of conventional CNT-FETs could be observed for the sample without tunnel barrier layer. These SET operations showed good reappearance. These results indicate that the insertion of the thin tunnel barrier layer is very effective for realizing SET operations at room temperature.