Room-Temperature Coulomb Oscillations of Carbon Nanotube Field-Effect Transistors with Oxidized Insulators

Abstract

Carbon nanotube field-effect transistors (CNT-FETs) with thin tunnel barriers were investigated, and room-temperature single-electron transistor (SET) operation was realized. A thin tunnel barrier layer, which was an oxidized aluminum layer, was inserted between nanotube channels and electrodes. Gate voltage dependences of the drain current were measured at 290 K. Clear Coulomb oscillations could be observed for the sample with the tunnel barrier layer, while only conventional ambipolar characteristics of conventional CNT-FETs could be observed for the sample without tunnel barrier layer. These SET operations showed good reappearance. These results indicate that the insertion of the thin tunnel barrier layer is very effective for realizing SET operations at room temperature.

SWNT growth on Al2O /Co/Al2O multilayer catalyst using alcohol gas source method in high vacuum

“…Carbon nanotubes (CNTs) are anticipated to be used in various future nanodevices [1][2][3]. To fabricate single-walled carbon nanotube (SWNT) devices compatible with the present CMOS technology, temperatures during device processing have to remain below 400-450 1C in order to avoid the mechanical deterioration of low dielectric constant intermetal dielectrics, and catalytic chemical vapor deposition (CVD) has several advantages, including a high yield, a low growth temperature and a good controllability of SWNT position and diameter.…”

Fabrication of Room-Temperature-Operating Carbon Nanotube Single-Charge Transistors

“…Generally, there are two techniques for fabricating CNT-SCTs. One is the use of defect-introduced CNT-FETs, (15)(16)(17)(18)(19) and the other is the use of CNT-FETs with a very small channel width. (20)(21)(22)(23) Although the defect-introduced CNT-FETs showed SCT's phenomena even at room temperature, their stability and reproducibility is rather poor.…”

Suppression of current fluctuations in carbon nanotube field-effect transistors by applying alternating current

“…The basic physics and practical device applications of SWNTs have created considerable interest in recent years for their unique characteristics [2][3][4][5]. Among them, carbon nanotube field-effect transistors (CNTFETs) are one of the most promising candidates for high sensitivity bio and chemical sensors [6][7][8][9][10][11][12][13]. Recently, many bio or chemical sensors using CNTFETs have been intensively investigated [14,15].…”