Room temperature ferromagnetism of GaMnN thin films is awaked by a mild hydrogenation treatment of samples synthesized by molecular beam epitaxy. Local environment of Mn atoms is monitored by Mn-L2,3 near edge x-ray absorption fine structure (NEXAFS) technique. Doped Mn ions are present at substitutional sites of Ga both before and after the hydrogenation. No secondary phase can be detected. Major valency of Mn changes from +3 to +2 by the hydrogenation. The present result supports the model that the ferromagnetism occurs when Mn2+ and Mn3+ are coexistent and holes in the mid- gap Mn band mediate the magnetic coupling.Comment: 12 pages, 5 figure

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To improve NBTI of pMOSFETs for hp-65nm technology node and beyond, low temperature catalytic CVD (Cat-CVD) formed SiN was applied to liner film in PMD and gate-sidewall formed. We found that N-H bond in the Cat-CVD SiN is enough stable to affect the NBTI while the amount of Si-H bond needed to be reduced, which can be achieved by higher catalyst temperature. The liner and sidewall application improved the NBTI lifetime of two and one orders of magnitude respectively comparing a low temperature LP-CVD SiN using hexa-chloride-disilane (HCD).

The Ar ion beam etching (IBE) of InP has been studied in orded to clarify its applicability as a microfabrication technique for devices with submicron geometry such as integrated optics devices. The IBE rate has been determined as a function of ion energy, current density and angle of beam incidence. The crystalline quality of the etched surface has been investigated by electron beam diffraction, Rutherford backscattering and photoluminescence measurements. The etched surface has a polycrystalline phase and recovers to a single crystal after annealing at 500 C. Grating structures with a period of around 2600 A have been fabricated on an InP surface by the Ar-IBE combined with a holographic-photoresist-exposure technique.

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