Nanostructure fabrication of InP by low energy ion beams

Formation of nanodots on oblique ion sputtered InP surfaces

“…The evolution of islands or dots can be accounted for by preferential sputtering of one of the components of InP [4,8]. To confirm change in the chemical environment, we performed XPS measurements.…”

“…They also observed ordered quantum dot patterns, with characteristic length proportional to the square root of ion-energy on GaSb and InSb surfaces by Ar + -ion sputtering at normal incidence [5]. High density dot structures on InP surfaces were observed by low-to-medium energy Ar + -ion irradiation, where shape and size of InP nanostructures depend strongly on ion-energy, -fluence, incident angle, and the sample temperature [4,8,[12][13][14]. Several reports discussed about the fabrication of self-assembled crystalline silicon nanostructures and ripple patterns by Ar + -ion irradiation where ion-beam parameters are important for the regularity of the generated patterns [6,9,17,18].…”

“…Although there are several possible approaches to grow semiconductor nanostructures, selforganization during low-energy ion induced erosion of semiconductor surface has been shown to be an elegant and cost-effective technique for the generation of large area nanostructured semiconductor surface [1]. Recently, several reports have demonstrated the formation of ripples and nanodots on various semiconductor surfaces by ion sputtering [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16].…”

Nanocone formation on ion-bombarded InP surfaces

“…Apart from, but possibly related to the preferential loss of P upon ion bombardment, the development of a pronounced surface morphology [31][32][33][34][35] and the formation of ripples and dots [5,[36][37][38][39][40][41][42][43][44][45][46][47][48] was observed on ion-irradiated InP surfaces. In addition, submicroscopic metallic islands of pure In and monocrystalline conical protrusions have been reported in a number of publications [28].…”

Self-sustained etch masking: A general concept to initiate the formation of nanopatterns during ion erosion

“…Surprisingly, at normal incidence and low acceleration energies, high aspect ratio structures readily form, opening for fast and low cost formation of functional surfaces. 19 On the III-V semiconductors the pattern formation is remarkable for the rapid formation rate, the low saturation leading to high aspect ratio structures, 19,20 and the occurrence of dense patterns over large surface areas. Moreover, the growth rate is enhanced by increasing temperature 20 opposite to the behavior encountered on other systems.…”