Ion Beam Etching of InP. I. Ar Ion Beam Etching and Fabrication of Grating for Integrated Optics

Yuba, Yoshihiko; Gamo, Kenji; Toba, Hiroshi; He, Xi; Namba, Susumu

doi:10.1143/jjap.22.1206

Cited by 21 publications

(6 citation statements)

References 12 publications

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“…These effects of Ar ion shower on the lattice spacing and surface morphology of the Pt layer are ascribed to the bombardment of the Ar ions onto the Pt layer that have energy high enough to mobilize the Pt atoms. It has been reported that the surface of a single crystal of InP is transformed to a polycrystal and that of GaAs is transformed to an amorphous phase on exposing them to Ar ion shower with an acceleration voltage of 1 kV [7].…”

Section: Results and Discussion 31 Modulation Of Lattice Parameter Amentioning

confidence: 99%

Magnetic Properties of Co-Pt Nanopillars as Function of Lattice Parameter and Morphology of Pt Underlayer

Sakuma

Nishiguchi

Mifuji

et al. 2009

Trans. Mat. Res. Soc. Japan

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Pt thin films were exposed to Ar ion shower. The lattice spacing of Pt (111) increased with the duration of the ion shower treatment. The surface morphology was also modulated by the ion shower: the grain size was minimized when exposed to the ion shower for 8 min. The changes in the lattice spacing and surface morphology of the Pt layer resulted in changes in the structure and magnetic properties of Co-Pt nanopillars grown on its surface. The lattice spacing of Co-Pt (00.2) increased with the lattice spacing of Pt (111). Correlations were found between the magnetic properties of Co-Pt nanopillars and the structural properties of Pt underlayers and Co-Pt nanopillars. Coercivity increased with the lattice spacing of Co-Pt (00.2). Squareness increased with a decrease in the roughness of the Pt underlayer.

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Section: Results and Discussion 31 Modulation Of Lattice Parameter Amentioning

confidence: 99%

Magnetic Properties of Co-Pt Nanopillars as Function of Lattice Parameter and Morphology of Pt Underlayer

Sakuma

Nishiguchi

Mifuji

et al. 2009

Trans. Mat. Res. Soc. Japan

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“…The fabrication of integrated optoelectronic devices necessitates pattern transfer techniques with a high degree of precision and a variable anisotropy, which is not achievable with wet etching process. Various dry etching techniques, such as plasma etching [1][2], reactive ion etching (RIE) [3][4][5], ion beam etching (IBE) [6][7], reactive ion beam etching (RIBE) [8][9], chemically assisted ion beam etching (CAIBE) [10][11] and inductively coupled plasma (ICP or RIE/ICP) etching [12] have been successfully used to fabricate InP-based devices to date. Of these techniques, RIE and ICP, which are well known and widely used dry-etching methods, provide higher anisotropy and better surface morphology when compared with other techniques.…”

Section: Introductionmentioning

confidence: 99%

A Comparative Study of Fabrication of Long Wavelength Diode Lasers Using CCl2F2/O2 and H2/CH4

Çakmak¹,

Bı̇ber²,

Karacalı³

et al. 2013

OPJ

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We report comparatively on fabrication of two-section ridge-waveguide tapered 3 quantum well (QW) InGaAsP/InP (1300 nm) and 5 QW AlGaInAs/InP (1550 nm) diode lasers. Gas mixtures of CCl 2 F 2 /O 2 and H 2 /CH 4 were used to form ridge-waveguide on the lasers with InP-based material structures. As known, chlorine-and hydrocarbon based gases are used to fabricate ridge-waveguide structures. Here, we show the difference between the structures obtained by using the both gas mixtures in which surface and sidewall structures as well as performance of the lasers were analysed using scanning electron microscopy. It is demonstrated that gas mixtures of CCl 2 F 2 /O 2 highly deteriorated the etched structures although different flow rates, rf powers and base pressures were tried. We also show that the structures etched with H 2 /CH 4 gas mixtures produced much better results that led to the successful fabrication of two-section devices with ridge-waveguide. The lasers fabricated using H 2 /CH 4 were characterized using output power-current (P-I) and spectral results.

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“…Several experiments on the IBE of InP have been reported in the literature. By using a Kaufmann-type ion source, Yuba et al [2] determined the IBE rates as a function of the ion energy, current density and angle of incidence. A maximum etch rate of 45 nm min −1 was observed around an ion incidence angle of 60 • at an acceleration voltage of 1 kV and an ion incidence angle of 0 • [2].…”

Section: Introductionmentioning

confidence: 99%

Ion beam and chemically assisted ion beam etching of InP with anisotropic and smooth surfaces

Çakmak

White²

2001

Semicond. Sci. Technol.

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In this paper, we investigate ion beam etching (IBE) and chemically assisted ion beam etching (CAIBE) of InP. While argon (Ar) alone is used for the IBE process, the CAIBE is carried out by using Ar/H 2 /CH 4 . The realization of CAIBE in an Ar/H 2 atmosphere is also achieved for the first time. The evolution of the surface roughness and morphology is presented comparatively by varying the acceleration voltage (V acc ), the discharge current (I dis ) and the ion incidence angle. The etch rate of the InP structures is studied as a function of I dis and V acc . The variation of the etch rate against the ion incidence angle is also investigated experimentally. A maximum etch rate of 70 nm min −1 is observed for an acceleration voltage of 2 kV and a discharge current of 45 mA at a 30 • ion incidence angle. It is also found that a drastic improvement of the surface roughness is observed for CAIBE using Ar/H 2 chemistry. In addition, the anisotropy of InP samples is also presented for two different masks, Al 2 O 3 and titanium (Ti) for the CAIBE mode. The most anisotropic structure of 83 • is performed using the Ti mask. Finally, the etched surfaces are quantified using the atomic force microscopy technique where the lowest root-mean-square roughness of 4.3 nm is found when using only Ar/H 2 gases.

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Ion Beam Etching of InP. I. Ar Ion Beam Etching and Fabrication of Grating for Integrated Optics

Cited by 21 publications

References 12 publications

Magnetic Properties of Co-Pt Nanopillars as Function of Lattice Parameter and Morphology of Pt Underlayer

Magnetic Properties of Co-Pt Nanopillars as Function of Lattice Parameter and Morphology of Pt Underlayer

A Comparative Study of Fabrication of Long Wavelength Diode Lasers Using CCl<sub>2</sub>F<sub>2</sub>/O<sub>2</sub> and H<sub>2</sub>/CH<sub>4</sub>

Ion beam and chemically assisted ion beam etching of InP with anisotropic and smooth surfaces

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Ion Beam Etching of InP. I. Ar Ion Beam Etching and Fabrication of Grating for Integrated Optics

Cited by 21 publications

References 12 publications

Magnetic Properties of Co-Pt Nanopillars as Function of Lattice Parameter and Morphology of Pt Underlayer

Magnetic Properties of Co-Pt Nanopillars as Function of Lattice Parameter and Morphology of Pt Underlayer

A Comparative Study of Fabrication of Long Wavelength Diode Lasers Using CCl&lt;sub&gt;2&lt;/sub&gt;F&lt;sub&gt;2&lt;/sub&gt;/O&lt;sub&gt;2&lt;/sub&gt; and H&lt;sub&gt;2&lt;/sub&gt;/CH&lt;sub&gt;4&lt;/sub&gt;

Ion beam and chemically assisted ion beam etching of InP with anisotropic and smooth surfaces

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A Comparative Study of Fabrication of Long Wavelength Diode Lasers Using CCl<sub>2</sub>F<sub>2</sub>/O<sub>2</sub> and H<sub>2</sub>/CH<sub>4</sub>