A nanocomposite of SnS2 nanoparticles with reduced graphene oxide (SnS2@RGO) had been successfully synthesized as a substitute conventional Pt counter electrode (CE) in a dye-sensitized solar cell (DSSC) system. The SnS2 nanoparticles were uniformly dispersed onto graphene sheets, which formed a nanosized composite system. The effectiveness of this nanocomposite exhibited remarkable electrocatalytic properties upon reducing the triiodide, owning to synergistic effects of SnS2 nanoparticles dispersed on graphene sheet and improved conductivity. Consequently, the DSSC equipped with SnS2@RGO nanocomposite CE achieved power conversion efficiency (PCE) of 7.12%, which was higher than those of SnS2 nanoparticles (5.58%) or graphene sheet alone (3.73%) as CEs and also comparable to the value (6.79%) obtained with pure Pt CE as a reference.

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In this letter, the reduction and removal of surface native oxide from as-received InGaAs surface by using dimethylaluminumhydride-derived aluminum oxynitride (AlON) passivation layer prior to HfTiO deposition is proposed to solve Fermi level pinning issue. It has been revealed that complete consumption of native oxides of AsOx and GaOx at the InGaAs surface, but no effect to InOx, has been realized after metalorganic chemical vapor deposition AlON at 300 °C. X-ray photoelectron spectroscopy observations of HfTiO/InGaAs gate stacks demonstrate that introducing AlON layer can suppress the regrowth of native oxide at the interface. In addition, the dependence of the valence band spectra of HfTiO/InGaAs gate stacks on AlON passivation layer has been discussed in detail.