Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

Abstract

In this letter, the reduction and removal of surface native oxide from as-received InGaAs surface by using dimethylaluminumhydride-derived aluminum oxynitride (AlON) passivation layer prior to HfTiO deposition is proposed to solve Fermi level pinning issue. It has been revealed that complete consumption of native oxides of AsOx and GaOx at the InGaAs surface, but no effect to InOx, has been realized after metalorganic chemical vapor deposition AlON at 300 °C. X-ray photoelectron spectroscopy observations of HfTiO/InGaAs gate stacks demonstrate that introducing AlON layer can suppress the regrowth of native oxide at the interface. In addition, the dependence of the valence band spectra of HfTiO/InGaAs gate stacks on AlON passivation layer has been discussed in detail.

Comparison of the degradation characteristics of AlON/InGaAs and Al2O3/InGaAs stacks

“…25 Based on the characteristics found in literature, it is reasonable to assume that the AlON/InGaAs barrier is smaller compared to the Al 2 O 3 /InGaAs barrier due to a reduction of the oxide band gap of AlON. 23,26 Figure 4 shows the general trend of the absolute values of V FB after CVS on both polarities for sets A and B. The samples were stressed at similar V G -V FB values ranging from À2.4 V to À5.4 V ( Fig.…”

Influence of Nitrogen Adsorption of Doped Ta on Characteristics of SiNx‐Based Resistive Random Access Memory

“…Many excellent results have been obtained. Some RRAMs with stable resistance property based on various materials, such as high‐k HfO 2 , TaO 2 , and TiO 2 , have been reported . At present, RRAM is widely accepted as a strong candidate for the next generation of memory due to its advantages of simple structure, good compressibility, fast read–write speed, and compatibility with complementary metal oxide semiconductor (CMOS) technology .…”

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

“…33 Various techniques have been used to form such layers on III-V semiconductors at low processing temperatures, including radio frequency sputtering, [22][23][24][25] thermal- 26 and plasma-enhanced [27][28][29] ALD, cyclic exposure of nitrogen plasma and trimethylaluminum (TMA), [30][31][32] and metal-organic vapor deposition (MOCVD). [33][34][35][36][37] Recently, we reported the use of MOCVD, as a high throughput and cost-effective process, to achieve AlN passivation in situ prior to ALD-based Al 2 O 3 gate oxide formation. Despite the atmospheric conditions employed, this process effectively improved the interface quality.…”

“…Recently, nitrogen passivation has attracted strong interest for improving dielectric/III-V interfaces. [20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36][37][38] Forming an AlN or AlO x N y layer is advantageous because of its relatively wide band gap and high dielectric constant. 33 Various techniques have been used to form such layers on III-V semiconductors at low processing temperatures, including radio frequency sputtering, [22][23][24][25] thermal- 26 and plasma-enhanced [27][28][29] ALD, cyclic exposure of nitrogen plasma and trimethylaluminum (TMA), [30][31][32] and metal-organic vapor deposition (MOCVD).…”