New applications of evanescent imaging for microlithography are introduced. The use of evanescent wave lithography (EWL) has been employed for 26nm resolution at 1.85NA using a 193nm ArF excimer laser wavelength to record images in a photoresist with a refractive index of 1.71. Additionally, a photomask enhancement effect is described using evanescent wave assist features (EWAF) to take advantage of the coupling of the evanescent energy bound at the substrate-absorber surface, enhancing the transmission of a mask opening through coupled interference.

The objective of this paper is to study the polarization induced by mask structures. Rigorous coupled-wave analysis (RCWA) was used to study the interaction of electromagnetic waves with mask features. RCWA allows the dependence of polarization effects of various wavelengths of radiation on grating pitch, profile, material, and thickness to be studied. The results show that for the five different mask materials examined, the material properties, mask pitch, and illumination all have a large influence on how the photomask polarizes radiation.

It is possible to extend optical lithography by using immersion imaging methods. Historically, the application of immersion optics to microlithography has not been seriously pursued because of the alternative solutions available. As the challenges of shorter wavelength become increasingly difficult, immersion imaging becomes more feasible. We present results from research into 193nm excimer laser immersion lithography at extreme propagation angles (such as those produces with strong OAI and PSM). This is being carried out in a fluid that is most compatible in a manufacturable process, namely water. By designing a system around the optical properties of water, we are able to image with wavelengths down to 193nm. Measured absorption is below 0.50 cm -1 at 185nm and below 0.05 cm -1 at 193nm. Furthermore, through the development of oblique angle imaging, numerical apertures approaching 1.0 in air and 1.44 in water are feasible. The refractive index of water at 193nm (1.44) allows for exploration of the following:1. k 1 values approaching 0.17 and optical lithography approaching 35nm. 2. Polarization effects at oblique angles (extreme NA). 3. Immersion and photoresist interactions with polarization. 4. Immersion fluid composition, temperature, flow, and micro-bubble influence on optical properties (index, absorption, aberration, birefringence). 5. Mechanical requirements for imaging, scanning, and wafer transport in a water media. 6. Synthesizing conventional projection imaging via interferometric imaging.

A Talbot interference immersion lithography system that uses a compact prism is presented. The use of a compact prism allows the formation of a fluid layer between the optics and the image plane, enhancing the resolution. The reduced dimensions of the system alleviate coherence requirements placed on the source, allowing the use of a compact ArF excimer laser. Photoresist patterns with a half-pitch of 45 nm were formed at an effective NA of 1.05. In addition, a variable-NA immersion interference system was used to achieve an effective NA of 1.25. The smallest half-pitch of the photoresist pattern produced with this system was 38 nm.

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Extending optics to 50 nm and beyond with immersion lithography Immersion lithography can allow for theoretical imaging to /4n (where n is the refractive index of imaging fluid). As 193 nm and 248 nm technology is pushed toward this limit, experimental data becomes increasingly important. This paper describes research carried out to explore the limitations of water immersion lithography and its extension to higher numerical aperture values using modifications to the imaging fluid. Resist imaging to 38 nm is demonstrated using water as an imaging fluid. Several alternative fluids are presented including phosphates, sulfates, and halides, which are shown to increase the refractive index of water.

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Recent advances in immersion lithography have created the need for a small field microstepper to carry out the early learning necessary for next generation device application. Combined with fluid immersion, multiple-beam lithography can provide an opportunity to explore lithographic imaging at oblique propagation angles and extreme NA imaging. Using the phase preserving properties of Smith Talbot interferometry, the Amphibian XIS immersion lithography microstepper has been created for research and development applications directed toward sub-90nm patterning. The system has been designed for use at ArF and KrF excimer laser wavelengths, based on a fused silica or sapphire prism lens with numerical aperture values up to 1.60. Combined with a chromeless phase grating mask, two and four beam imaging is made possible for feature resolution to 35nm. The approach is combined with X-Y staging to provide immersion imaging on a microstepper platform for substrates ranging up to 300mm. The Amphibian system consists of single or dual wavelength sources (193nm and 248nm), a 2mm exposure field size, stage accuracy better than 1 um, polarization control over a full range from linear polarization to unpolarized illumination, full control of exposure dose and demodulation (to synthesize defocus), and the ability to image both line patterns as well as contact features. A fluid control system allows use of water or alternative fluids, with the ability to change fluids rapidly between wafers. The Amphibian system is fully enclosed in a HEPA and amine controlled environment for use in fab or research environments.