Hyper NA water immersion lithography at 193nm and 248nm

Smith, Bruce W.; Fan, Yongfa; Zhou, Jianming; Bourov, Anatoly; Zavyalova, Lena; Lafferty, Neal; Cropanese, Frank; Estroff, Andrew

doi:10.1116/1.1825018

Cited by 12 publications

(8 citation statements)

References 3 publications

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“…These films are promising for application as thin film resistors 1 and diffusion barriers [2][3][4] in ultra-large scale integrated circuits, as well as mask layers for x-ray lithography. 5 However, the Ta-N system is comprised of several equilibrium phases and metastable structures. [6][7][8][9][10][11][12] Thus, the film structure and properties depend strongly on the change in the N to Ta atomic ratio.…”

Section: Introductionmentioning

confidence: 99%

Structures of ultra-thin atomic-layer-deposited TaNx films

Köhn

Eizenberg

2004

Journal of Applied Physics

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Atomic layer deposition ͑ALD͒ is an attractive technique in fabrication of microelectronics presently and in the future, for its accurate thickness control in atomic scale, excellent conformality, and uniformity over large areas at low temperature. It has been adapted and used in deposition of ultrathin TaN x films as diffusion barriers for Cu metallization. In this study, composition, structure, and stability of ultra-thin ͑1.5-10 nm͒ atomic layer deposited films are characterized by a set of complementary analytical techniques. The results indicate that the N to Ta atomic concentration ratio in the ALD TaN x films is approximately 2, independent of the film thickness and annealing up to 750°C. Hydrogen, oxygen, and carbon are detected as impurities within the as-deposited films. The as-deposited ALD TaN x films have an fcc NaCl-type nanocrystalline structure even when the film thickness is 1.5 nm. Following thermal anneal at 600°C and higher, the films do not undergo a structural change except for an increase in grain size and a decrease in the lattice constant. X-ray photoelectron spectra results indicate that all the Ta atoms in the films are bonded ionically with the surrounding N atoms. An ex situ thermal treatment at 600°C for 1 h removes the O, which penetrated the layers, by a reduction reaction with the residual H and results in densification of the ALD films. Our analysis of the experimental results indicates that the excess of N atoms of the ALD TaN x films is mainly due to Ta vacancies in the fcc NaCl-type structure. The structural and compositional characteristics of the films explain why the films serve as good diffusion barriers to Cu metallization.

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Section: Introductionmentioning

confidence: 99%

Structures of ultra-thin atomic-layer-deposited TaNx films

Köhn

Eizenberg

2004

Journal of Applied Physics

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“…In the past, the most straightforward way to improve resolution was to decrease the wavelength of radiation, as illustrated in Fig. 44,45 In this set of experiments carried out to achieve a sublithographic wavelength OL, only conventional binary chrome-on-glass photomasks of four times magnification without phase shift features were used. However, the reduction of the wavelength beyond ArF lasers emitting at 193 nm would require a drastic redesigning of the lithographic system since shorter wavelengths are simply absorbed by the quartz lenses that direct the source light in current systems with laser wavelengths of 193-432 nm.…”

Section: A Pattern and Partial Coherence Control For Sublithographicmentioning

confidence: 99%

Synthesized processing techniques for monolithic integration of nanometer-scale hole type photonic band gap crystal with micrometer-scale microelectromechanical structures

Teo¹,

Liu²,

Yu³

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inProposed single-exposure holographic fabrication of microsphere-type photonic crystals through phase-mask techniques J. Appl. Phys. 97, 096102 (2005); 10.1063/1.1881792 Three-dimensional macroporous silicon photonic crystal with large photonic band gap Appl. Phys. Lett. 86, 011101 (2005); 10.1063/1.1842855Silicon-based honeycomb photonic crystal structures with complete photonic band gap at 1.5 μ m wavelength This article reports the synthesized fabrication process design and module development that enabled the monolithic integration of deep submicrometer size, two dimensional hole-type photonic band gap crystals ͑PhCs͒ with microelectromechanical system ͑MEMS͒ actuators and optical testing structures ͑OTS͒. Techniques enabling sublithographic wavelength patterning using only conventional chrome-on-glass binary photomasks without phase shift features were achieved through the manipulation of mask bias designs and the partial coherence control of the lithographic exposure system. Together with the development of time multiplexed reactive ion etching and focus ion beam milling techniques, such design of the process allows the realization of highly dense PhC and MEMS actuators physically released from the buried oxide layer. Here, disparate pattern dimensions ͓with PhC critical dimensions ͑CDs͒ of only 175 nm, MEMS typical dimensions of 2 m, and OTS openings more than 400 m wide͔, varied etch depth ͑3 m for the PhC and MEMS, 61 m for the OTS͒, and the requirement of a sufficient process latitude for exposure and etch processes are some of the key challenges that were overcome for a successful integration of air-bridge-type PhC CDs with movable MEMS actuators. Hence, the works described in this article enable MEMS tunable PhC properties with potential application in next generation dynamic optical communication networks and photonic integrated circuits.

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“…Switkes and Rothschild few years later printed 60 nm period gratings using 157 nm light, proposing this technique as the way to improve the resolution of optical lithography [35,36]. The simplicity of the immersion IL approach had motivated an enormous amount of work since then, utilizing different immersion liquids and light sources [22,35,[37][38][39][40][41][42][43][44][45].…”

Section: Introductionmentioning

confidence: 99%