The large photocurrent hysteresis observed in many organometal trihalide perovskite solar cells has become a major hindrance impairing the ultimate performance and stability of these devices, while its origin was unknown. Here we demonstrate the trap states on the surface and grain boundaries of the perovskite materials to be the origin of photocurrent hysteresis and that the fullerene layers deposited on perovskites can effectively passivate these charge trap states and eliminate the notorious photocurrent hysteresis. Fullerenes deposited on the top of the perovskites reduce the trap density by two orders of magnitude and double the power conversion efficiency of CH 3 NH 3 PbI 3 solar cells. The elucidation of the origin of photocurrent hysteresis and its elimination by trap passivation in perovskite solar cells provides important directions for future enhancements to device efficiency.

Organolead trihalide perovskite (OTP) materials are emerging as naturally abundant materials for low-cost, solution-processed and highly efficient solar cells. Here, we show that, in OTP-based photovoltaic devices with vertical and lateral cell configurations, the photocurrent direction can be switched repeatedly by applying a small electric field of <1 V μm(-1). The switchable photocurrent, generally observed in devices based on ferroelectric materials, reached 20.1 mA cm(-2) under one sun illumination in OTP devices with a vertical architecture, which is four orders of magnitude larger than that measured in other ferroelectric photovoltaic devices. This field-switchable photovoltaic effect can be explained by the formation of reversible p-i-n structures induced by ion drift in the perovskite layer. The demonstration of switchable OTP photovoltaics and electric-field-manipulated doping paves the way for innovative solar cell designs and for the exploitation of OTP materials in electrically and optically readable memristors and circuits.

Organometal trihalide perovskites (OTPs) are emerging as very promising photovoltaic materials because the power conversion efficiency (PCE) of OTP solar cells quickly rises and now rivals with that of single crystal silicon solar cells after only five-years research. Their prospects to replace silicon photovoltaics to reduce the cost of renewable clean energy are boosted by the low-temperature solution processing as well as the very low-cost raw materials and relative insensitivity to defects. The flexibility, semitransparency, and vivid colors of perovskite solar cells are attractive for niche applications such as built-in photovoltaics and portable lightweight chargers. However, the low stability of current hybrid perovskite solar cells remains a serious issue to be solved before their broad application. Among all those factors that affect the stability of perovskite solar cells, ion migration in OTPs may be intrinsic and cannot be taken away by device encapsulation. The presence of ion migration has received broad attention after the report of photocurrent hysteresis in OTP based solar cells. As suggested by much direct and indirect experimental evidence, the ion migration is speculated to be the origin or an important contributing factor for many observed unusual phenomenon in OTP materials and devices, such as current-voltage hysteresis, switchable photovoltaic effect, giant dielectric constant, diminished transistor behavior at room temperature, photoinduced phase separation, photoinduced self-poling effect, and electrical-field driven reversible conversion between lead iodide (PbI2) and methylammonium lead triiodide (MAPbI3). Undoubtedly thorough insight into the ion-migration mechanism is highly desired for the development of OTP based devices to improve intrinsic stability in the dark and under illumination. In this Account, we critically review the recent progress in understanding the fundamental science on ion migration in OTP based solar cells. We look into both theoretical and experiment advances in answering these basic questions: Does ion migration occur and cause the photocurrent hysteresis in perovskite solar cells? What are the migrating ion species? How do ions migrate? How does ion migration impact the device efficiency and stability? How can ion migration be mitigated or eliminated? We also raise some questions that need to be understood and addressed in the future.

Solvent-annealing is found to be an effective method to increase the grain size and carrier diffusion lengths of trihalide perovskite materials. The carrier diffusion length of MAPbI3 is increased to over 1 μm. The efficiency remains above 14.5% when the MAPbI3 thickness changes from 250 nm to 1 μm, with the highest efficiency reaching 15.6%.

Large-aspect-ratio grains are needed in polycrystalline thin-film solar cells for reduced charge recombination at grain boundaries; however, the grain size in organolead trihalide perovskite (OTP) films is generally limited by the film thickness. Here we report the growth of OTP grains with high average aspect ratio of 2.3–7.9 on a wide range of non-wetting hole transport layers (HTLs), which increase nucleus spacing by suppressing heterogeneous nucleation and facilitate grain boundary migration in grain growth by imposing less drag force. The reduced grain boundary area and improved crystallinity dramatically reduce the charge recombination in OTP thin films to the level in OTP single crystals. Combining the high work function of several HTLs, a high stabilized device efficiency of 18.3% in low-temperature-processed planar-heterojunction OTP devices under 1 sun illumination is achieved. This simple method in enhancing OTP morphology paves the way for its application in other optoelectronic devices for enhanced performance.

Perovskite solar cells to date are made of polycrystalline films which contain a high density of defects. Imperfection passivation to reduce non-radiative recombination and suppress ion migration could improve device efficiency and device stability.

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A new low-temperature all-solution approach was invented to produce perovskite solar cells with an efficiency of 15.4% at high device yield.