Highly narrowband perovskite single-crystal photodetectors enabled by surface-charge recombination

Fang, Yanjun; Dong, Qingfeng; Shao, Yuchuan; Yuan, Yongbo; Huang, Jinsong

doi:10.1038/nphoton.2015.156

Cited by 1,269 publications

(1,302 citation statements)

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“…During the crystal growth, the seed crystal was fixed to a silicon substrate on the top of Huang's group also demonstrated the growth of single-and mixed-halide perovskite single crystals with different Cl/Br and Br/I precursor ratios [45]. The precursor solution was prepared by mixing methylamine, single or mixed haloid acid with different halide ratios, and lead(II) acetate to form a super saturated aqueous solution at 100°C.…”

Section: Stl Methodsmentioning

confidence: 99%

“…8b, about 10 2 times higher R and EQE, and approximately 10 3 times faster response speed. Fang et al [45] reported highly narrowband photodetector based on a series of halide perovskite single crystals due to the strong surface-charge recombination-induced suppression of charge collection for shortwavelength excitation. By tuning the molar ratio of Cl/Br precursor, perovskite with different band gap can be produced.…”

Section: Photodetectormentioning

confidence: 99%

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Progress in organic-inorganic hybrid halide perovskite single crystal: growth techniques and applications

Ding

Yan

2017

Sci. China Mater.

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Section: Stl Methodsmentioning

confidence: 99%

Section: Photodetectormentioning

confidence: 99%

Progress in organic-inorganic hybrid halide perovskite single crystal: growth techniques and applications

Ding

Yan

2017

Sci. China Mater.

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“…Despite lack of understanding of the mechanism, however, this process has been capitalised upon to enable the rapid synthesis of various large perovskite crystals (Fig. 1h,i), providing a good platform for a range of optical and electrical characterizations 22 , and broad optoelectronic applications such as photodetectors 23 and radiation energy harvesting 24 . It is our opinion however, that the greatest benefit of the single crystal work will be an added learning and understanding of crystallisation, which will be beneficial for reaching optimum properties of the polycrystalline thin films.…”

Section: Macroscopic Single Crystalsmentioning

confidence: 99%

Metal halide perovskites for energy applications

2016

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Exploring prospective materials for energy production and storage is one of the biggest challenges in this century. Solar energy is arguably the most important amongst various renewable energy resources, due to its wide availability and sustainability with lowest environmental impact. Metal halide perovskites have emerged as a class of semiconductor materials with unique properties including tuneable band gap, high absorption coefficient, broad absorption spectrum, high charge carrier mobility and long charge diffusion lengths, which enable a broad range of photovoltaic and optoelectronic applications. Since the first embodiment of perovskite solar cells showing a power conversion efficiency of 3.8%, the device performance has now been boosted up to a certified 21% within a few years. In this perspective, we summarize differing forms of perovskite materials produced via various deposition procedures, focusing on their energy related applications, and discuss current challenges and possible solutions, with the aim of stimulating potential new applications.

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“…Several types of photodetectors based on photoconductors, photodiodes and phototransistors with broadband absorption [125][126][127][128][129] and tunable narrowband absorption 5,130 in the visible have been demonstrated, both being interesting features for sensitized photo-FETs.…”

Section: Ideal Sensitizer Characteristicsmentioning

confidence: 99%

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

2016

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The large diversity of applications in our daily lives that rely on photodetection Photodetectors are one of the key components in many optoelectronic devices which transduce optical into electrical information. Today, photodetectors have reached a mature technology level and address a huge application spectrum including imaging, remote sensing, fibre-optic communication and spectroscopy among many others. However, to tackle challenges and to surpass existing limitations in sensitivity of state-of-the-art photodetector systems, new device architectures and material systems are needed which offer low-cost fabrication and high performance over a wide spectral range. The active research field on photodetection grows and many novel nanostructured material systems 1 have been employed for light sensing including Quantum dots 2,3 , Perovskites 4,5 , organic molecules and polymers 6,7 , Carbon Nanotubes 8,9 , Graphene 10,11 and the large field of semiconducting 2D materials such as the transition metal dichalcogenides (TMDCs) and black phosphorus 12,13 .Photodetector performance is governed by both the optical and electronic properties of the employed semiconductor. The former determines the spectral coverage and quantum efficiency of the detector whereas the latter determines, through the carrier transport and carrier density, the amount of dark current flowing through the device, as well as the efficiency of charge separation and collection upon illumination. The key parameters for a strong signal response are a high photon to electron conversion rate (quantum efficiency) and ideally an inherent gain 3 mechanism, which yields multiple carriers per absorbed photon. The response signal is then weighed against the noise portion of the ratio, which has to be minimized for maximum sensitivity. There are several device-external noise sources, such as the photon noise due to the statistical arrival of photons on the device or the read-out noise in photodetector arrays that originates in preamplifier electronics. Here, we will put emphasis on the device (photodetector pixel) inherent noise, which stems partially from thermally generated charge carriers and also from the intrinsic carrier density that contribute to the dark current of the device (shot noise limit) as well as flicker noise (1/f). It is however important to note that the sensitivity of a detector with inherent noise lower than the noise floor of commercially used CMOS read-out circuits, typically met in photodiodes, is limited by the latter, thus a photodetector technology with an inherent gain mechanism is desired to alleviate this effect.The relevant performance metrics and terminology used throughout this article are described in Box 1. Box 1 -Performance metrics for photodetection Responsivity [A/W]The fundamental process behind photodetection is absorption of light. Responsivity R, a measure of output current per incoming optical power in units of A/W, describes how a detector system responds to illumination. Responsivity depends on the incident...

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Highly narrowband perovskite single-crystal photodetectors enabled by surface-charge recombination

Cited by 1,269 publications

References 42 publications

Progress in organic-inorganic hybrid halide perovskite single crystal: growth techniques and applications

Progress in organic-inorganic hybrid halide perovskite single crystal: growth techniques and applications

Metal halide perovskites for energy applications

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

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