2017
DOI: 10.1007/s40843-017-9039-8
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Progress in organic-inorganic hybrid halide perovskite single crystal: growth techniques and applications

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Cited by 64 publications
(54 citation statements)
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“…Besides the methods mentioned above, melt crystallization techniques such as Czochralski method, Bridgman method and zone-melting method can be also employed to grow large-size industrially important functional crystals. [38,[76][77] The organic-inorganic hybrid halide perovskite single crystals offers a perfect platform to investigate fundamental and intrinsic properties of perovskites. [78][79][80][81]…”
Section: Anti-solvent Vapor-assisted Crystallization (Avc) Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Besides the methods mentioned above, melt crystallization techniques such as Czochralski method, Bridgman method and zone-melting method can be also employed to grow large-size industrially important functional crystals. [38,[76][77] The organic-inorganic hybrid halide perovskite single crystals offers a perfect platform to investigate fundamental and intrinsic properties of perovskites. [78][79][80][81]…”
Section: Anti-solvent Vapor-assisted Crystallization (Avc) Methodsmentioning
confidence: 99%
“…[12,37] This is because that the long carrier diffusion length allows the photogenerated charge carriers to be completely extracted from perovskite single crystals with an active layer thickness much larger than thin-film analogs, which is very desirable for both photovoltaic and photodetection applications. [38] In general, the long diffusion length result from greater carrier mobility, longer lifetime, and much smaller trap densities. [39] Low trap-state density on the order of 10 9 to10 10 cm À 3 and long charge carrier diffusion length exceeding 10 micrometers in MAPbX 3 single crystals was reported by Shi et al [40] The bandgap engineering is significant for organic-inorganic hybrid perovskites.…”
Section: Introductionmentioning
confidence: 99%
“…High quality perovskite film has more effictive carrier dissociation/transport and longer carrier diffusion length, with less ineffective recombination from pinholes and grain boundaries [17,18]. The crystal growth kinetics are closely related to surface property of substrate, composition and concentration of precursors, additives, annealing temperature, and atmosphere condition [19][20][21][22]. Controlling the procedure of nucleation and growth during film deposition and annealing is a promising route to morphology management and device optimization [23,24].…”
Section: Fundamental Working Principles Of Perovskite Optoelectronic mentioning
confidence: 99%
“…Many techniques have been used to grow large-sized 3D hybrid halide perovskite bulk single crystals. [15][16][17][18] For example, Dang et al and Lian et al adopted a bottom seeded solution temperature-lowering (STL) growth method to grow MAPbI 3 single crystals with centimeter sizes. 19,20 By combining an inverse temperature crystallization method and repeated seeded growth method, Liu et al grew extra-large MAPbI 3 single crystals 21 of up to 120 mm 22 and FAPbI 3 single crystals of 20 mm.…”
Section: Introductionmentioning
confidence: 99%