As a novel active semiconducting material for optoelectronics, organic‐inorganic hybrid perovskites have attracted much attention due to the special advantages of the high light absorption coefficient, long diffusion length and high charge carrier mobility. The single crystals with low defects and free grain boundaries can provide an ideal platform to study the intrinsic photophysical properties and show better performance compared with its amorphous or polycrystalline states. The excellent physical properties of perovskite single crystals make them applied in many fields of solar cells, photodetectors, light‐emitting diodes, lasers, catalysis, etc. Here, the recent progress in the single crystal growth, molecular structures and the bandgap engineering of organic‐inorganic hybrid perovskite single crystals are introduced. The perspective and the future challenge are also provided.
As a typical two‐dimensional (2D) layered material, (vanadium disulfide) VS2 has huge potentials for application in SIBs due to its large interlayer spacing and high conductivity compared to metal oxide or other 2D materials. Reduced graphene oxide (RGO) possesses exceptional electronic properties and large specific area favoring fast electron transport and rich redox sites. In this work, VS2 hollow flower spheres and RGO nanocomposites were developed for the first time, it was synthesized using a facile solvothermal method. Benefiting from the exceptional layered structure, when used as the anode material for SIBs at room temperature, the as‐prepared electrode material of VS2 hollow flower spheres @RGO (named as VS2 HFS/RGO) nanocomposites delivers a high reversible discharge specific capacity of around 430 mAh/g at current density of 100 mA/g, superior rate performance (2 A/g) and excellent cycling properties with the discharge capacity remained 350 mAh/g at 100 mA/g after 500 cycles. Results show that the kinetics of VS2 HFS/RGO nanocomposites were mainly a capacitive‐controlled storage process and the high capacity contribution were beneficial for good rate performance. This work could provide new approaches and potentials for exploring and searching high performances anode materials for the practical applications of SIBs.
Recent advances in 2D transition metal dichalcogenides (TMDs) have led to a variety of promising technologies for nanoelectronics, photonics, sensing, energy storage, and optoelectronics. Among these dichalcogenides, tin sulfide (SnS2) has received great attention due to its high optical absorption coefficient, high theoretical capacitance, high natural abundance of precursor chemicals, and minimal impact of these on the environment (green chemistry). It is crucial to obtain materials with varied morphologies because the chemical and physical properties are dependent on the morphology. The controlled synthesis of SnS2 with a specific morphology, a hollow sphere, is of significant interest. Herein, a facile, template‐free, one‐step solvothermal method to prepare SnS2 spheres with a hollow structure is demonstrated. The size of the SnS2 hollow spheres is uniform, at 2 μm in diameter, and the walls of the sphere are only 300 nm thick. The hollow structure forms due to the different specific surface energies of the SnS2 sheets and the fluorine‐doped tin oxide (FTO) substrate. Furthermore, the possible growth mechanism of these SnS2 hollow spheres is proposed, which may be applied to other 2D TMD systems.
Tin sulphide (SnS2) shows great potential in photo‐/electrochemical applications including hydrogen evolution due to its unique layered structure, intrinsic semiconducting nature and high optical absorption capacity. Hollow structured SnS2 was synthesized by Xuexia He, Peng Hu and co‐workers (article no. http://doi.wiley.com/10.1002/pssr.201900185) on FTO glass by template‐free solvothermal routine. The studies of morphology evolution and phase changing indicate that SnS2 experienced the steps of tilted sheets aggregation, extensional growth with cross‐linking, formation of sphere wall starters, and then hollow structure completion. Specific surface energies difference between SnS2 material and FTO substrate is believed to be the origin to trigger the conformation of the special hollow structure. – The cover article belongs to the Focus Section “TMD Synthesis”, a compilation of 7 articles in this issue, guest‐edited by Zheng Liu (cf. Preface, article no. http://doi.wiley.com/10.1002/pssr.201900634).
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