2019
DOI: 10.1002/pssr.201970043
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SnS2 Hollow Spheres: Template‐Free Synthesis and Growth Mechanism

Abstract: Tin sulphide (SnS2) shows great potential in photo‐/electrochemical applications including hydrogen evolution due to its unique layered structure, intrinsic semiconducting nature and high optical absorption capacity. Hollow structured SnS2 was synthesized by Xuexia He, Peng Hu and co‐workers (article no. http://doi.wiley.com/10.1002/pssr.201900185) on FTO glass by template‐free solvothermal routine. The studies of morphology evolution and phase changing indicate that SnS2 experienced the steps of tilted sheets… Show more

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Cited by 12 publications
(4 citation statements)
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“…The first type has two different resistance states (HRS and LRS),and the transition between the two resistance states under voltage stimulation is abrupt. The type has been widely studied as nonvolatile memory, which is often called RRAM [3,35]. The second type refers to continuous switching, which has been proposed as an attractive candidate to emulate synaptic functions in biologically inspired neuromorphic systems [204,205].…”
Section: Neuromorphic Hardwarementioning
confidence: 99%
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“…The first type has two different resistance states (HRS and LRS),and the transition between the two resistance states under voltage stimulation is abrupt. The type has been widely studied as nonvolatile memory, which is often called RRAM [3,35]. The second type refers to continuous switching, which has been proposed as an attractive candidate to emulate synaptic functions in biologically inspired neuromorphic systems [204,205].…”
Section: Neuromorphic Hardwarementioning
confidence: 99%
“…Therefore, logic circuits and memory devices can be integrated on the same carbonbased platform if nonvolatile memory can be implemented in carbon-based materials. Given that massive solid-state materials exhibiting RS properties have been discovered [33], but none of them can fully satisfy the demand for RRAM applications, it is urgent and essential to investigate new storage materials for RRAM development [34,35].…”
Section: Introductionmentioning
confidence: 99%
“…[32] To overcome this, one strategy is to design a hollow structure of VS 2 materials. [33] because hollow-structured transition metal dichalcogenides could boost electrochemical performances. [34] The hollow structure allows the electrode material to have a large specific surface area, which can provide more active sites, thus, increase the effective contact between the surface of the electrode material and the electrolyte.…”
Section: Introductionmentioning
confidence: 99%
“…In the Focus Section on “TMD Synthesis” assembled here, the authors from different countries have synthesized various TMDs, including SnS 2 , MoS 2 , WS 2 , etc. The work by Qiaoliang Bao and co‐workers shows great promise for the synthesis of larger‐size TMDs up to millimeter scale, whereas Xuexia He and co‐workers discuss in‐depth the growing mechanisms of the emerging TMD SnS 2 .…”
mentioning
confidence: 99%