Memristor memory has attracted more attentions to act as one of future non-volatile memories. One access transistor and one memristor (1T1R) cell structure can be used to eliminate the issue of sneak path current of memristor memories with crossbar structure. In this paper, we propose several fault models for 1T1R memristor memories based on electrical defects, such as resistive bridge between two nodes, transistor stuck-on and stuckopen faults. In comparison with existing faults, two new faults, write disturbance fault (W DF ) and dynamic write disturbance fault (dW DF ), are found. In addition, a March test is proposed to cover the defined faults. The March test requires (1+2a+2b)N write operations and 5N read operations for an N -bit memristor memory, where a and b are the number of consecutive Write-1 and Write-0 operations for activating a dW DF .Index Terms-Non-volatile memory, memristor, resistive memory, test.
Fluorescent sensors are resistant to electromagnetic interference and are electrically insulated, allowing for highly accurate measurements. Quantum dots (QDs) serve as outstanding sensing materials owing to the unique optical properties such as tunable photoluminescence (PL), excellent visible light activity, and high chemical and physical stability. In this paper, we develop an optical humidity sensor based on a QDs nanocomposite film. The film is made of polyvinyl alcohol (PVA), SiO2 microsphere (SM), and QDs through the layer-by-layer self-assembly method. The mechanism of humidity detection is moisture-induced quenching of the QDs fluorescence intensity. The results reveal that our sensor shows a good linear response to relative humidity in the range of 5% to 97%, a fast response-recovery time of 25 s and 20 s, and good repeatability for more than 50 cycles as well as high stability for over 180 days. Possessing the remarkable property, optical humidity sensors are envisaged for great potential applications in environmental monitoring.
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