2018 IEEE 23rd European Test Symposium (ETS) 2018
DOI: 10.1109/ets.2018.8400695
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Modeling and testing comparison faults of memristive ternary content addressable memories

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“…In [20], [45], Bayram et al studied the use of various memristive materials, including magnetic tunnel junctions (MTJs), for TCAM architectures and analyzed the performance for various hardware configurations. The directions of some researches, not directly related to our research, include fault tolerance in memristive TCAM architectures [46], memristor-CMOS based CAM architectures [47], memristor-based crossbar architectures for pattern matching applications [18], inmemory computing analysis using resistive TCAMs [48], read circuits for memristive architectures [49] and CAM cell designs using FeFET cells [50]. In comparison to previous researches, we aimed for a general purpose design that allows to integrate and even compare different types of memristors.…”
Section: Related Workmentioning
confidence: 99%
“…In [20], [45], Bayram et al studied the use of various memristive materials, including magnetic tunnel junctions (MTJs), for TCAM architectures and analyzed the performance for various hardware configurations. The directions of some researches, not directly related to our research, include fault tolerance in memristive TCAM architectures [46], memristor-CMOS based CAM architectures [47], memristor-based crossbar architectures for pattern matching applications [18], inmemory computing analysis using resistive TCAMs [48], read circuits for memristive architectures [49] and CAM cell designs using FeFET cells [50]. In comparison to previous researches, we aimed for a general purpose design that allows to integrate and even compare different types of memristors.…”
Section: Related Workmentioning
confidence: 99%