Understanding the cellular differentiation of multicellular organisms requires the characterization of genes whose expression is modulated in a cell type-specific manner. The Arabidopsis (Arabidopsis thaliana) root hair cell is one model for studying cellular differentiation. In this study, root hair cell-specific genes were screened by a series of in silico and experimental filtration procedures. This process included genome-wide screening for genes with a root hair-specific cis-element in their promoters, filtering root-specific genes from the root hair-specific cis-element-containing genes, further filtering of genes that were suppressed in root hair-defective plant lines, and experimental confirmation by promoter assay. These procedures revealed 19 root hair-specific genes, including many protein kinases and cell wall-related genes, most of which have not been characterized thus far. Functional analyses of these root hair-specific genes with loss-of-function mutants and overexpressing transformants revealed that they play roles in hair growth and morphogenesis. This study demonstrates that a defined cis-element can serve as a filter to screen certain cell type-specific genes and implicates many new root hair-specific genes in root hair development.

Improving the stability and tuning the optical properties of semiconducting perovskites are vital for their applications in advanced optoelectronic devices. We present a facile synthetic method for hybrid composites of perovskites and metal–organic frameworks (MOFs). A simple two-step solution-based method without organic surfactants was employed to make all-inorganic lead-halide perovskites (CsPbX3; X = Cl, Br, I, or mixed halide compositions) form directly in the pores of MIL-101 MOF. That is, a polar organic solution of lead halide (PbX2) was impregnated into the MOF pores to give PbX2@MIL-101, which was then subjected to a perovskite-formation reaction with cesium halide (CsX) dissolved in methanol. The compositions of the halogen anions in the perovskites can be modulated with various halide precursors, leading to CsPbX3@MIL-101 composites with X3 = Cl3, Cl2Br, Br2Cl, Br3, Br2I, I2Br, and I3 that exhibit gradual variation of band gap energies and tuned emission wavelengths from 417 to 698 nm.

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The environmental toxicity associated with silver nanoparticles (AgNPs) has been a major focus in nanotoxicology. The Ag(+) released from AgNPs may affect ecotoxicity, although whether the major toxic effect is governed by Ag(+) ions or by AgNPs themselves is unclear. In the present study, we have examined the ecotoxicity of AgNPs in aquatic organisms, silver ion-release kinetics of AgNPs, and their relationship. The 48-h median effective concentration (EC50) values for Daphnia magna of powder-type AgNP suspensions were 0.75 µg/L (95% confidence interval [CI] = 0.71-0.78) total Ag and 0.37 µg/L (95% CI = 0.36-0.38) dissolved Ag. For sol-type AgNP suspension, the 48-h EC50 values for D. magna were 7.98 µg/L (95% CI = 7.04-9.03) total Ag and 0.88 µg/L (95% CI = 0.80-0.97) dissolved Ag. The EC50 values for the dissolved Ag of powder-type and sol-type AgNPs for D. magna showed similar results (0.37 µg/L and 0.88 µg/L) despite their differences of EC50 values in total Ag. We observed that the first-order rate constant (k) of Ag(+) ions released from AgNPs was 0.0734/h at 0.05 mg/L total Ag at 22°C within 6 h. The kinetic experiments and the toxicity test showed that 36% and 11% of sol-type AgNPs were converted to the Ag(+) ion form under oxidation conditions, respectively. Powder-type AgNPs showed 49% conversion rate of Ag(+) ion from AgNPs. We also confirmed that Ag(+) ion concentration in AgNP suspension reaches an equilibrium concentration after 48 h, which is an exposure time of the acute aquatic toxicity test.

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We report Al 2 O 3 /In 0.53 Ga 0.47 As MOSFETs having both self-aligned in situ Mo source/drain ohmic contacts and self-aligned InAs source/drain n + regions formed by MBE regrowth. The device epitaxial dimensions are small, as is required for 22-nm gate length MOSFETs; a 5-nm In 0.53 Ga 0.47 As channel with an In 0.48 Al 0.52 As back confinement layer and the n ++ source/drain junctions do not extend below the 5-nm channel. A device with 200-nm gate length showed I D = 0.95 mA/μm current density at V GS = 4.0 V and g m = 0.45 mS/μm peak transconductance at V DS = 2.0 V. Index Terms-InAs source/drain, InGaAs MOSFET, migration-enhanced epitaxial regrowth, source/drain regrowth, III-V MOSFET.