Transferable self-supporting ZnO porous films were synthesized via a hydrothermal approach without the presence of any substrates. Piezoresistive sensors were fabricated by directly transferring the ZnO porous films onto FTO, which show a pressure sensitivity of 0.005/KPa and a fast sensitive time with both response time and recovery time less than 1s. The results were discussed in terms of the current-voltage characteristics of the device. It is anticipated that this low-cost and large-area-compatible technology would have potential for applications in industrial, civil and transportation fields.
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