Transferable self-supporting ZnO porous films for low-cost piezoresistive sensors

Zeng, Qiongfang; Lei, Dingyou; Zhang, Yinggui; Huang, Huihui

doi:10.1088/0268-1242/29/4/045009

Cited by 10 publications

(7 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The hydrothermal method results in self-supporting ZnO nanowire arrays of thickness of dozens of micrometers. 36 Such structures were utilized as piezoresistive sensors 37 and as a components of light-emitting diodes. 38 Another approach utilized the direct inorganic precursor evaporation onto quartz and then subsequent film self-exfoliation at room temperature.…”

Section: ■ Introductionmentioning

confidence: 99%

Photoactive Langmuir–Blodgett, Freely Suspended and Free Standing Films of Carboxylate Ligand-Coated ZnO Nanocrystals

Paczesny

Wolska‐Pietkiewicz

Binkiewicz

et al. 2016

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

A new possibility for the formation of macroscopic and photoactive structures from zinc oxide nanocrystals is described. Photoactive freely suspended and free-standing films of macroscopic area (up to few square millimeters) and submicrometer thickness (up to several hundreds of nanometers) composed of carboxylate ligand-coated zinc oxide nanocrystallites (RCO2-ZnO NCs) of diameter less than 5 nm are prepared according to a modified Langmuir-Schaefer method. First, the suspension of RCO2-ZnO NCs is applied onto the air/water interface. Upon compression, the films become turbid and elastic. The integrity of such structures is ensured by interdigitation of ligands stabilizing ZnO NCs. Great elasticity allows transfer of the films onto a metal frame as a freely suspended film. Such membranes are afterward extracted from the supporting frame to form free-standing films of macroscopic area. Because the integrity of the films is maintained by ligands, no abolishment of quantum confinement occurs, and films retain spectroscopic properties of initial RCO2-ZnO NCs. The mechanism of formation of thin films of RCO2-ZnO NCs at the air/water interface is discussed in detail.

show abstract

Section: ■ Introductionmentioning

confidence: 99%

Photoactive Langmuir–Blodgett, Freely Suspended and Free Standing Films of Carboxylate Ligand-Coated ZnO Nanocrystals

Paczesny

Wolska‐Pietkiewicz

Binkiewicz

et al. 2016

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…Under on/off states of a mass at 3 V forward bias, the piezoresistive sensor shows good reliability with relatively fast response and recovery times of ∼0.03 s and ∼0.27 s, respectively. The present piezoresistive sensor has comparable sensitivity to piezoresistive sensor based porous ZnO . However, it possesses larger detection range and faster response time.…”

Section: Resultsmentioning

confidence: 86%

“…However, it possesses larger detection range and faster response time. The electronic resistance variation ratios (Δ R / R 0 ) were used to calculate the piezoresistive sensitivity of the device . Figure (b), (c) show the electronic resistance variation ratios (measured for Δ V = 12 V – 9 V) as a function of the applied external loads (masses).…”

Section: Resultsmentioning

confidence: 99%

Fast piezoresistive sensor and UV photodetector based on Mn-doped ZnO nanorods

Chey

Liu

Alnoor

et al. 2014

Phys. Status Solidi RRL

View full text Add to dashboard Cite

A low cost hydrothermal synthesis method to synthesize Mn‐doped ZnO nanorods (NRs) with controllable morphology and structure has been developed. Ammonia is used to tailor the ammonium hydroxide concentration, which provides a source of OH– for hydrolysis and precipitation during the growth instead of HMT. The morphological, chemical composition, structural, and electronic structure studies of the Mn‐doped ZnO NRs show that the Mn‐doped ZnO NRs have a hexagonal wurtzite ZnO structure along the c‐axis and the Mn ions replace the Zn sites in the ZnO NRs matrix without any secondary phase of metallic manganese element and manganese oxides observed. The fabricated PEDOT:PSS/Zn0.85Mn0.15O Schottky diode based piezoresistive sensor and UV photodetector shows that the piezoresistive sensor has pressure sensitivity of 0.00617 kPa–1 for the pressure range from 1 kPa to 20 kP and 0.000180 kPa–1for the pressure range from 20 kPa to 320 kPa with relatively fast response time of 0.03 s and the UV photodetector has both relatively high responsivity and fast response time of 0.065 A/W and 2.75 s, respectively. The fabricated Schottky diode can be utilized as a very useful human‐friendly interactive electronic device for mass/force sensor or UV photodetector in everyday living life. This developed device is very promising for small‐size, low‐cost and easy‐to‐customize application‐specific requirements. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)

show abstract

“…ZnO is a semiconductor that presents interesting characteristics such as adequate chemical and thermal stability, direct bandgap width, naturally well-defined crystallographic structure (wurtzite with preferential orientation (002)), and high transparency. It is not dangerous to the environment, and, in addition, it is compatible with conventional microfabrication techniques [15][16][17]. Despite these beneficial properties, the piezoresistive effect of ZnO thin films has not been as widespread as the piezoelectric effect [18,19].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of the Piezoresistivity of a Thin Film of ZnO Doped with Fluorine and Deposited via the Ultrasonic Spray Pyrolysis Technique for Applications in Micro/Nano-Electromechanical Sensors

et al. 2022

View full text Add to dashboard Cite

In this study, thin films of zinc oxide doped with fluorine ZnO: F were deposited via ultrasonic spray pyrolysis (USP) with an atomic ratio of [F/Zn] in a starting solution of 15 at.% on borosilicate glass coverslips and SiO2/Si substrates. The structure, electrical resistivity, and thickness were obtained via X-ray diffraction, the four-point technique, and profilometry, respectively. A ZnO: F piezoresistor was modeled at the fixed end of the cantilever through lithography and chemical etching. A SiO2/Si cantilever structure was used to evaluate the piezoresistivity of a ZnO: F thin film, and temperature coefficient of resistance (TCR) measurements were performed in an electric furnace. The strain on the ZnO: F piezoresistor caused by the application of masses at the free end of the cantilever was determined using a theoretical equation, in addition to a simulation in the COMSOL Multiphysics 5.3a FEM (finite element method) software considering the dimensions and materials of the manufactured device. The ZnO: F thin films were hexagonal wurtzite (phase 002), with thicknesses in the range from 234 nm to 295 nm and with resistivities of the order of 10−2 Ω.cm. The ZnO: F thin-film piezoresistor showed a gauge factor (GF) of 12.7 and a TCR of −3.78 × 10−3 %/K up to 525 K, which are suitable properties for sensor development.

show abstract

Transferable self-supporting ZnO porous films for low-cost piezoresistive sensors

Cited by 10 publications

References 17 publications

Photoactive Langmuir–Blodgett, Freely Suspended and Free Standing Films of Carboxylate Ligand-Coated ZnO Nanocrystals

Photoactive Langmuir–Blodgett, Freely Suspended and Free Standing Films of Carboxylate Ligand-Coated ZnO Nanocrystals

Fast piezoresistive sensor and UV photodetector based on Mn-doped ZnO nanorods

Evaluation of the Piezoresistivity of a Thin Film of ZnO Doped with Fluorine and Deposited via the Ultrasonic Spray Pyrolysis Technique for Applications in Micro/Nano-Electromechanical Sensors

Contact Info

Product

Resources

About