Data and materials availability: All data are available in the manuscript or supplementary information. All materials are available upon request to L.D. Methods Solution-phase synthesis of pure 2D halide perovskite sheets In this study, ten types of pure 2D halide perovskite sheets were synthesized via a quaternary solvent method.

Transparent conductive film on plastic substrate is a critical component in low-cost, flexible, and lightweight optoelectronics. Industrial-scale manufacturing of high-performance transparent conductive flexible plastic is needed to enable wide-ranging applications. Here, we demonstrate a continuous roll-to-roll (R2R) production of transparent conductive flexible plastic based on a metal nanowire network fully encapsulated between graphene monolayer and plastic substrate. Large-area graphene film grown on Cu foil via a R2R chemical vapor deposition process was hot-laminated onto nanowires precoated EVA/PET film, followed by a R2R electrochemical delamination that preserves the Cu foil for reuse. The encapsulated structure minimized the resistance of both wire-to-wire junctions and graphene grain boundaries and strengthened adhesion of nanowires and graphene to plastic substrate, resulting in superior optoelectronic properties (sheet resistance of ∼8 Ω sq(-1) at 94% transmittance), remarkable corrosion resistance, and excellent mechanical flexibility. With these advantages, long-cycle life flexible electrochromic devices are demonstrated, showing up to 10000 cycles.

The controlled production of high-quality atomically thin III-VI semiconductors poses a challenge for practical applications in electronics, optoelectronics, and energy science. Here, we exploit a controlled synthesis of single- and few-layer In2Se3 flakes on different substrates, such as graphene and mica, by van der Waals epitaxy. The thickness, orientation, nucleation site, and crystal phase of In2Se3 flakes were well-controlled by tuning the growth condition. The obtained In2Se3 flakes exhibit either semiconducting or metallic behavior depending on the crystal structures. Meanwhile, field-effect transistors based on the semiconducting In2Se3 flakes showed an efficient photoresponse. The controlled growth of atomically thin In2Se3 flakes with diverse conductivity and efficient photoresponsivity could lead to new applications in photodetectors and phase change memory devices.

The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters.ABSTRACT: Lateral heterostructures with planar integrity form the basis of two-dimensional (2D) electronics and optoelectronics. Here we report that, through a twostep chemical vapor deposition (CVD) process, highquality lateral heterostructures can be constructed between metallic and semiconducting transition metal disulfide (TMD) layers. Instead of edge epitaxy, polycrystalline monolayer MoS 2 in such junctions was revealed to nucleate from the vertices of multilayered VS 2 crystals, creating one-dimensional junctions with ultralow contact resistance (0.5 kΩ·μm). This lateral contact contributes to 6-fold improved field-effect mobility for monolayer MoS 2 , compared to the conventional on-top nickel contacts. The all-CVD strategy presented here hence opens up a new avenue for all-2D-based synthetic electronics. See https://pubs.acs.org/sharingguidelines for options on how to legitimately share published articles. Corresponding SEM images. Inset in panel f is the zoomed-in SEM image of a lateral VS 2 −MoS 2 interface (scale bar 2 μm). (g, h) Raman and PL spectra on the central VS 2 region and the surrounding MoS 2 region (blue and red curves, respectively) for the MoS 2 −VS 2 heterostructures. (i) Schematic illustration of MoS 2 growth on presynthesized multilayered VS 2 .

Interlayer coupling plays essential roles in the quantum transport, polaritonic, and electrochemical properties of stacked van der Waals (vdW) materials. In this work, we report the unconventional interlayer coupling in vdW heterostructures (HSs) by utilizing an emerging 2D material, Janus transition metal dichalcogenides (TMDs). In contrast to conventional TMDs, monolayer Janus TMDs have two different chalcogen layers sandwiching the transition metal and thus exhibit broken mirror symmetry and an intrinsic vertical dipole moment. Such a broken symmetry is found to strongly enhance the vdW interlayer coupling by as much as 13.2% when forming MoSSe/MoS2 HS as compared to the pristine MoS2 counterparts. Our noncontact ultralow-frequency Raman probe, linear chain model, and density functional theory calculations confirm the enhancement and reveal the origins as charge redistribution in Janus MoSSe and reduced interlayer distance. Our results uncover the potential of tuning interlayer coupling strength through Janus heterostacking.

Patterning of high-quality two-dimensional chalcogenide crystals with unique planar structures and various fascinating electronic properties offers great potential for batch fabrication and integration of electronic and optoelectronic devices. However, it remains a challenge that requires accurate control of the crystallization, thickness, position, orientation and layout. Here we develop a method that combines microintaglio printing with van der Waals epitaxy to efficiently pattern various single-crystal two-dimensional chalcogenides onto transparent insulating mica substrates. Using this approach, we have patterned large-area arrays of two-dimensional single-crystal Bi2Se3 topological insulator with a record high Hall mobility of ∼1,750 cm2 V−1 s−1 at room temperature. Furthermore, our patterned two-dimensional In2Se3 crystal arrays have been integrated and packaged to flexible photodetectors, yielding an ultrahigh external photoresponsivity of ∼1,650 A W−1 at 633 nm. The facile patterning, integration and packaging of high-quality two-dimensional chalcogenide crystals hold promise for innovations of next-generation photodetector arrays, wearable electronics and integrated optoelectronic circuits.

Precise time trajectories and detailed reaction pathways of the Diels-Alder reaction were directly observed using accurate single-molecule detection on an in situ label-free single-molecule electrical detection platform. This study demonstrates the well-accepted concerted mechanism and clarifies the role of charge transfer complexes with endo or exo configurations on the reaction path. An unprecedented stepwise pathway was verified at high temperatures in a high-voltage electric field. Experiments and theoretical results revealed an electric field–catalyzed mechanism that shows the presence of a zwitterionic intermediate with one bond formation and variation of concerted and stepwise reactions by the strength of the electric field, thus establishing a previously unidentified approach for mechanistic control by electric field catalysis.

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