Atomically thin tungsten disulfide (WS2), a structural analogue to MoS2, has attracted great interest due to its indirect-to-direct band-gap tunability, giant spin splitting, and valley-related physics. However, the batch production of layered WS2 is underdeveloped (as compared with that of MoS2) for exploring these fundamental issues and developing its applications. Here, using a low-pressure chemical vapor deposition method, we demonstrate that high-crystalline mono- and few-layer WS2 flakes and even complete layers can be synthesized on sapphire with the domain size exceeding 50 × 50 μm(2). Intriguingly, we show that, with adding minor H2 carrier gas, the shape of monolayer WS2 flakes can be tailored from jagged to straight edge triangles and still single crystalline. Meanwhile, some intersecting triangle shape flakes are concomitantly evolved from more than one nucleus to show a polycrystalline nature. It is interesting to see that, only through a mild sample oxidation process, the grain boundaries are easily recognizable by scanning electron microscopy due to its altered contrasts. Hereby, controlling the initial nucleation state is crucial for synthesizing large-scale single-crystalline flakes. We believe that this work would benefit the controlled growth of high-quality transition metal dichalcogenide, as well as in their future applications in nanoelectronics, optoelectronics, and solar energy conversions.

Molybdenum disulfide (MoS2) is back in the spotlight because of the indirect-to-direct bandgap tunability and valley related physics emerging in the monolayer regime. However, rigorous control of the monolayer thickness is still a huge challenge for commonly utilized physical exfoliation and chemical synthesis methods. Herein, we have successfully grown predominantly monolayer MoS2 on an inert and nearly lattice-matching mica substrate by using a low-pressure chemical vapor deposition method. The growth is proposed to be mediated by an epitaxial mechanism, and the epitaxial monolayer MoS2 is intrinsically strained on mica due to a small adlayer-substrate lattice mismatch (~2.7%). Photoluminescence (PL) measurements indicate strong single-exciton emission in as-grown MoS2 and room-temperature PL helicity (circular polarization ~0.35) on transferred samples, providing straightforward proof of the high quality of the prepared monolayer crystals. The homogeneously strained high-quality monolayer MoS2 prepared in this study could competitively be exploited for a variety of future applications.

Controllable synthesis of monolayer MoS2 is essential for fulfilling the application potentials of MoS2 in optoelectronics and valleytronics, etc. Herein, we report the scalable growth of high quality, domain size tunable (edge length from ∼ 200 nm to 50 μm), strictly monolayer MoS2 flakes or even complete films on commercially available Au foils, via low pressure chemical vapor deposition method. The as-grown MoS2 samples can be transferred onto arbitrary substrates like SiO2/Si and quartz with a perfect preservation of the crystal quality, thus probably facilitating its versatile applications. Of particular interest, the nanosized triangular MoS2 flakes on Au foils are proven to be excellent electrocatalysts for hydrogen evolution reaction, featured by a rather low Tafel slope (61 mV/decade) and a relative high exchange current density (38.1 μA/cm(2)). The excellent electron coupling between MoS2 and Au foils is considered to account for the extraordinary hydrogen evolution reaction activity. Our work reports the synthesis of monolayer MoS2 when introducing metal foils as substrates, and presents sound proof that monolayer MoS2 assembled on a well selected electrode can manifest a hydrogen evolution reaction property comparable with that of nanoparticles or few-layer MoS2 electrocatalysts.