Controlled Growth of Atomically Thin In<sub>2</sub>Se<sub>3</sub> Flakes by van der Waals Epitaxy

Lin, Min; Wu, Di; Yu, Zhishui; Huang, Wei; Ji, Wei; Zheng, Wenshan; Zhao, Shuang; Jin, Chuanhong; Guo, Yilin; Peng, Hailin; Liu, Zhongfan

doi:10.1021/ja406351u

Cited by 195 publications

(195 citation statements)

References 31 publications

Supporting

Mentioning

189

Contrasting

Unclassified

Order By: Relevance

“…and group III–VI nanomaterials (InSe,38, 39, 40, 41, 42 GaSe,43, 44, 45, 46, 47, 48 etc.) have been extensively investigated in many fields including photodetectors,49, 50, 51, 52, 53, 54, 55, 56, 57, 58 gas sensors,59, 60 field effect transistors (FETs),38, 61, 62, 63, 64, 65 and flexible devices 66, 67, 68…”

Section: Introductionmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

View full text Add to dashboard Cite

As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant, low‐cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

show abstract

Section: Introductionmentioning

confidence: 99%

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

et al. 2016

View full text Add to dashboard Cite

show abstract

“…The layered structure of In 2 Se 3 is normally consisting of [Se-In-Se-In-Se] sheets stacked with Se atoms along the c-axis [11][12][13][14][15]. The strong intralayer bonding and weak interlayer Van der Waals interaction lead to highly anisotropic structural, electrical, optical, and mechanical properties [16,17].…”

Section: Introductionmentioning

confidence: 99%

Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

2017

View full text Add to dashboard Cite

High uniformity Au-catalyzed indium selenide (In 2 Se 3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In 2 Se 3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100°C/s. Comparing with the slower heating rate, 0.1°C/s, the average diameters and distributions (standard deviation, SD) of In 2 Se 3 nanowires with and without the RTA process are 97.14 ± 22.95 nm (23.63%) and 119.06 ± 48.75 nm (40.95%), respectively. The in situ annealing TEM is used to study the effect of heating rate on the formation of Au nanoparticles from the as-deposited Au film. The results demonstrate that the average diameters and distributions of Au nanoparticles with and without the RTA process are 19.84 ± 5.96 nm (30.00%) and about 22.06 ± 9.00 nm (40.80%), respectively. It proves that the diameter size, distribution, and uniformity of Au-catalyzed In 2 Se 3 nanowires are reduced and improved via the RTA pre-treated. The systemic study could help to control the size distribution of other nanomaterials through tuning the annealing rate, temperatures of precursor, and growth substrate to control the size distribution of other nanomaterials.

show abstract

“…Detailed growth parameters and characterizations of the structural and electrical properties can be found in Ref. [23]. When the sample was rapidly cooled down (> 100C/min) from the deposition temperature, a superlattice phase can be observed by transmission electron microscopy (TEM), 12,13,23 [120] directions give rise to specific electron diffraction or FFT patterns, suggesting that In2Se3 has the R3m structure.…”

mentioning

confidence: 99%

“…[23]. When the sample was rapidly cooled down (> 100C/min) from the deposition temperature, a superlattice phase can be observed by transmission electron microscopy (TEM), 12,13,23 [120] directions give rise to specific electron diffraction or FFT patterns, suggesting that In2Se3 has the R3m structure. Although multiple phases were observed in previous work, 13,19 extensive TEM images reveal that the as-grown samples in this study are predominantly -phase with R3m space group, which is also confirmed by the Raman spectra in Fig.…”

mentioning

confidence: 99%

Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes

et al. 2015

Self Cite

View full text Add to dashboard Cite

ABSTRACT:The dielectric constant or relative permittivity (r) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms, but also the specific atomic arrangement in the crystal lattice. In this letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nano-flakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured r increases monotonically as a function of the thickness and saturates to the bulk value at around 6 ~ 8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principle calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.KEYWORDS: microwave impedance microscopy, layer-dependent dielectric constant, In2Se3 nano-flakes, layered materials, polarization, first-principle calculations 2The rapid rise of graphene in the past decade has led to an active research field on twodimensional (2D) layered materials.1, 2 Of particular interest here are layered semiconductors, such as many metal chalcogenides, for their roles as gate dielectrics or channel materials in nextgeneration electronics. 3 Due to the strong intralayer covalent bonding and weak van der Waals (vdW) interactions, most physical properties are already anisotropic in the bulk form, with a clear 3D-2D crossover when approaching the monolayer thickness. In particular, the number of layers (n) in a thin-film 2D system is expected to strongly influence its dielectric constant, a fundamental electrical property that determines the capacitance and charge screening in electronic devices. 4-6The 2D material in this study is the layered semiconducting chalcogenide In2Se3, a technologically important system for phase-change memory, thermoelectric, and photoelectric applications 7 . The In-Se phase diagram is among the most complex ones in binary compounds.Even at the exact stoichiometry of In:Se = 2:3, multiple phases can occur under different temperatures and pressures. [8][9][10][11] By controlling the synthesis parameters or thermal/electrical pretreatment processes, several phases (superlattice, simple hexagonal -phase, simple hexagonal -phase, and amorphous state) with vastly different electrical conductivity can coexist at the ambient condition, 12-14 which explains the research interest of In2Se3 as a prototypical phasechange material. 7,[12][13][14][15][16][17][18] In addition, the lattice constant of In2Se3 matches well with Bi2Se3, which is heavily investigated for its high thermoelectric figure-of-merit and ...

show abstract

Controlled Growth of Atomically Thin In₂Se₃ Flakes by van der Waals Epitaxy

Cited by 195 publications

References 31 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes

Contact Info

Product

Resources

About

Controlled Growth of Atomically Thin In2Se3 Flakes by van der Waals Epitaxy

Cited by 195 publications

References 31 publications

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Booming Development of Group IV–VI Semiconductors: Fresh Blood of 2D Family

Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

Thickness-Dependent Dielectric Constant of Few-Layer In2Se3 Nanoflakes

Contact Info

Product

Resources

About

Controlled Growth of Atomically Thin In₂Se₃ Flakes by van der Waals Epitaxy

Thickness-Dependent Dielectric Constant of Few-Layer In₂Se₃ Nanoflakes