Controlling Growth High Uniformity Indium Selenide (In2Se3) Nanowires via the Rapid Thermal Annealing Process at Low Temperature

Abstract

High uniformity Au-catalyzed indium selenide (In 2 Se 3) nanowires are grown with the rapid thermal annealing (RTA) treatment via the vapor-liquid-solid (VLS) mechanism. The diameters of Au-catalyzed In 2 Se 3 nanowires could be controlled with varied thicknesses of Au films, and the uniformity of nanowires is improved via a fast pre-annealing rate, 100°C/s. Comparing with the slower heating rate, 0.1°C/s, the average diameters and distributions (standard deviation, SD) of In 2 Se 3 nanowires with and without the RTA process are 97.14 ± 22.95 nm (23.63%) and 119.06 ± 48.75 nm (40.95%), respectively. The in situ annealing TEM is used to study the effect of heating rate on the formation of Au nanoparticles from the as-deposited Au film. The results demonstrate that the average diameters and distributions of Au nanoparticles with and without the RTA process are 19.84 ± 5.96 nm (30.00%) and about 22.06 ± 9.00 nm (40.80%), respectively. It proves that the diameter size, distribution, and uniformity of Au-catalyzed In 2 Se 3 nanowires are reduced and improved via the RTA pre-treated. The systemic study could help to control the size distribution of other nanomaterials through tuning the annealing rate, temperatures of precursor, and growth substrate to control the size distribution of other nanomaterials.

Характеристика наноструктурованих включень In6Se7 у шаруватих кристалах α-In2Se3 аналітичними методами рентгенівської дифрактометрії

“…A set of diffraction maxima are observed, whose positions correspond to the 𝛼-In 2 Se 3 polytype described by the space group P63/mmc(194) of hexagonal system (standard JCPDS Card No: 23-294 [33]). The measured parameters of the unit cells are 𝑎 = 4.025 Å and 𝑐 = 19.235 Å; they agree well with the data given in the literature [20,34]. No other peaks were revealed which could testify to the availability of foreign crystalline phases in the material, including the abovementioned Se, InSe, and In 6 Se 7 ones, as well as others.…”

Low-Dimensional In2Se3 Compounds: From Material Preparations to Device Applications

“…Projecting the three stages onto the Au–In–Se ternary phase diagram, the In 2 Se 3 nanowire growth process can be shown clearly. Traditionally, high-purity In 2 Se 3 powder or Se and In powder is used as precursors; gold (Au) nanoparticles are used as catalysts. , Schematic illustrations of VLS In 2 Se 3 nanowire growth and a reactor of In 2 Se 3 nanowire growth are shown in Figure a,b, respectively. In the first stage, before In 2 Se 3 vapor condensation, Au catalysts still remain in the solid state up to the temperature of the growth temperature.…”

Tunable Layer Orientation and Morphology in Vapor–Liquid–Solid Growth of One-Dimensional GeS van der Waals Nanostructures

“…To date, two canonical cases have been demonstrated, namely longitudinal (layer stacking along wire axis) and transverse (wire axis aligned with the layers) van der Waals nanowires, although in principle it should be possible to realize arbitrary angles between the layer stacking and the nanowire axis. So far, vdW nanowires from a few layered materials (GeS, , GaS, GaSe, SnSe, , In 2 Se 3 , − Bi 2 Se 3 ) have been reported. The stacking orientation appears to be selected spontaneously during the growth, and prior work shows roughly equal numbers of longitudinal ,,,,, and transverse (ribbonlike) ,,,,,− vdW nanowires.…”