Very high frequency (VHF) nanoelectromechanical systems (NEMS) provide unprecedented sensitivity for inertial mass sensing. We demonstrate in situ measurements in real time with mass noise floor approximately 20 zg. Our best mass resolution corresponds to approximately 7 zg, equivalent to approximately 30 xenon atoms or the mass of an individual 4 kDa molecule. Detailed analysis of the ultimate sensitivity of such devices based on these experimental results indicates that NEMS can ultimately provide inertial mass sensing of individual intact, electrically neutral macromolecules with single-Dalton (1 amu) resolution.

We report measurements of intrinsic dissipation in micron-sized suspended resonators machined from single crystals of galium arsenide and silicon. In these experiments on high-frequency micromechanical resonators, designed to understand intrinsic mechanisms of dissipation, we explore dependence of dissipation on temperature, magnetic field, frequency, and size. In contrast to most of the previous measurements of acoustic attenuation in crystalline and amorphous structures in this frequency range, ours is a resonant measurement; dissipation is measured at the natural frequencies of structural resonance, or modes of the structure associated with flexural and torsional motion. In all our samples we find a weakly temperature dependent dissipation at low temperatures. We compare and contrast our data to various probable mechanisms, including thermoelasticity, clamping, anharmonic mode-coupling, surface anisotropy and defect motion, both in bulk and on surface. The observed parametric dependencies indicate that the internal defect motion is the dominant mechanism of intrinsic dissipation in our samples.

SiC is an extremely promising material for nanoelectromechanical systems given its large Young's modulus and robust surface properties. We have patterned nanometer scale electromechanical resonators from single-crystal 3C-SiC layers grown epitaxially upon Si substrates. A surface nanomachining process is described that involves electron beam lithography followed by dry anisotropic and selective electron cyclotron resonance plasma etching steps. Measurements on a representative family of the resulting devices demonstrate that, for a given geometry, nanometer-scale SiC resonators are capable of yielding substantially higher frequencies than GaAs and Si resonators. Silicon carbide is an important semiconductor for high temperature electronics due to its large band gap, high breakdown field, and high thermal conductivity. Its excellent mechanical and chemical properties have also made this material a natural candidate for microsensor and microactuator applications in microelectromechanical systems ͑MEMS͒. Recently, there has been a great deal of interest in the fabrication and measurement of semiconductor devices with fundamental mechanical resonance frequencies reaching into the microwave bands. Among technological applications envisioned for these nanoelectromechanical systems ͑NEMS͒ are ultrafast, high-resolution actuators and sensors, and high frequency signal processing components and systems.2 From the point of view of fundamental science, NEMS also offer intriguing potential for accessing regimes of quantum phenomena and for sensing at the quantum limit.SiC is an excellent material for high frequency NEMS for two important reasons. First, the ratio of its Young's modulus, E, to mass density, , is significantly higher than for other semiconducting materials commonly used for electromechanical devices, e.g., Si and GaAs. Flexural mechanical resonance frequencies for beams directly depend upon the ratio ͱ (E/). The goal of attaining extremely high fundamental resonance frequencies in NEMS, while simultaneously preserving small force constants necessary for high sensitivity, requires pushing against the ultimate resolution limits of lithography and nanofabrication processes. SiC, given its larger ͱ (E/), yields devices that operate at significantly higher frequencies for a given geometry, than otherwise possible using conventional materials. Second, SiC possesses excellent chemical stability.3 This makes surface treatments an option for higher quality factors ͑Q factor͒ of resonance. It has been argued that for NEMS the Q factor is governed by surface defects and depends on the device surface-to-volume ratio.

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