In addition to synthesizing biofunctionalized magnetic nanopaticles for the purpose of magnetically labeling biomolecules, a system to measure the ac magnetic susceptibility of the labeled sample was developed. When a targeted biomolecule was mixed with magnetic fluid possessing biofunctionalized magnetic nanoparticles, portions of magnetic nanoparticles agglomerated to form clusters due to the association with the targeted biomolecule. Due to the formation of magnetic clusters, the measured ac magnetic susceptibility reduced. The relationship between the mixed-frequency ac magnetic susceptibility reduction and the amount of the detected biomolecule was established.

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In this work, we report a ferroelectric memory with strained‐gate engineering. The memory window of the high strain case was improved by ∼71% at the same ferroelectric thickness. The orthorhombic phase transition (from ferroelectric to anti‐ferroelectric transition) plays a key role in realizing negative capacitance effect at high gate electric field. Based on a reliable first principles calculation, we clarify that the gate strain accelerates the phase transformation from metastable monoclinic to orthorhombic and thus largely enhances the ferroelectric polarization without increasing dielectric thickness. This ferroelectric strain technology shows the potential for emerging device application.

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