Performance Enhancements in p-Type Al-Doped Tin-Oxide Thin Film Transistors by Using Fluorine Plasma Treatment

Chen, Po Chun; Chiu, Yi-Wei; Liou, Guan Lin; Zheng, Zhigang; Cheng, Chun Hu; Wu, Yu‐Feng

doi:10.1109/led.2016.2646378

Cited by 26 publications

(18 citation statements)

References 10 publications

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“…Extraordinary efforts have been made for developing p-type oxide materials and TFTs which are comparable to their n-type counterparts in performance [6], [7], [16]- [20]. To date, ternary Cu-bearing oxides, binary copper oxides, tin monoxide (SnO), spinel-type oxides, NiO, etc.…”

Section: Introduction Omplementarymentioning

confidence: 99%

Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays

Liu

Zhang

Yang

et al. 2019

IEEE Trans. Electron Devices

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Oxide semiconductors are highly attractive for fabrication of large-area thin-film electronics because of their high electrical performance, low process temperature, high uniformity, and ease of industrial manufacturing. N-type oxide semiconductors, such as InGaZnO, are highly developed and have already been commercialized for backplane drivers of flat-panel displays. To date, developing complementary metal-oxidesemiconductor (CMOS) technology is still an urgent issue in order to build low-power electronic circuits based on oxide semiconductors. In this work, various CMOS circuits, including inverters, NAND, NOR, XOR, d latches, full adders, and 7-, 11-, 21-, and 51-stage ring oscillators, are fabricated based on sputtered p-type tin monoxide (SnO) and n-type InGaZnO. The inverters show rail-to-rail output voltage behavior, low average static power consumption of 8.84 nW, high noise margin level up to ~40% supply voltage, and high uniformity with negligible standard deviation. The NAND, NOR, XOR, d latches, and full adders show desirably ideal input-output characteristics. The performances of ring oscillators indicate small stage delay of ~1 μs, extremely high uniformity and high yield which are essential for large-area thin-film electronics. This work may inspire constructions of low-power, large-area, large-scale, and highperformance transparent/flexible CMOS circuits fully based on oxide semiconductors for applications beyond flat-panel displays.

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Section: Introduction Omplementarymentioning

confidence: 99%

Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays

Liu

Zhang

Yang

et al. 2019

IEEE Trans. Electron Devices

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“…The interface defects can produce trapping or scattering effects, resulting in SS degradation. For the TFT device, the density of interface traps (N it ) at the gate insulator/active channel interface can be extracted from the equation [20]:…”

Section: Methodsmentioning

confidence: 99%

Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

Shang

Liu

et al. 2020

IEEE J. Electron Devices Soc.

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In this paper, we investigated the performance of an n-type tin-oxide (SnO x) thin film transistor (TFT) by experiments and simulation. The fabricated SnO x TFT device by oxygen plasma treatment on the channel exhibited n-type conduction with an on/off current ratio of 4.4x10 4 , a high field-effect mobility of 18.5 cm 2 /V.s and a threshold swing of 405 mV/decade, which could be attributed to the excess reacted oxygen incorporated to the channel to form the oxygen-rich n-type SnO x. Furthermore, a TCAD simulation based on the n-type SnO x TFT device was performed by fitting the experimental data to investigate the effect of the channel traps on the device performance, indicating that performance enhancements were further achieved by suppressing the density of channel traps. In addition, the n-type SnO x TFT device exhibited high stability upon illumination with visible light. The results show that the n-type SnO x TFT device by channel plasma processing has considerable potential for next-generation high-performance display application. INDEX TERMS Thin film transistor (TFT), tin-oxide (SnO x), plasma, TCAD.

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“…For the trapping hysteresis, an NVM has been fabricated using a ZnO TFT with Ag nanoparticles embedded as charge storage nodes at the insulator-ZnO interface [22]. We have previously proposed high-performance tin oxide (SnO) TFTs for display application [23][24][25]. In this work, we fabricated one transistor and one capacitor (1T-1C) device structure integrating a p-type SnO TFT and a ferroelectric HfZrO capacitor and investigated the influence of the thermal annealing and capacitor area.…”

Section: Ofmentioning

confidence: 99%

Experimental Investigation of Thermal Annealing and Ferroelectric Capacitor Area Effects for Hafnium-Zirconium Oxide Devices

Hsu

Lee

2020

Coatings

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In this study, we reveal that the thermal budget of post-metal annealing not only determines the formation of the ferroelectric phase and dipole domain but also the film quality of the gate stack in a metal-ferroelectric-metal capacitor. The higher leakage current caused by defect traps or grain boundaries within a gate stack would influence the stability of the ferroelectric domain switching. Furthermore, the ferroelectric domain switching and polarization current also depend on the ferroelectric capacitor area. We observe that a HfAlO ferroelectric capacitor can dominate the transfer characteristics of a p-type SnO thin-film transistor through the modulation of series capacitance in the gate stack based on a one-transistor one-capacitor series configuration. According to experimental results, the memory hysteresis window can be improved significantly with the area scaling due to the improvement of capacitance matching accuracy.

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Performance Enhancements in p-Type Al-Doped Tin-Oxide Thin Film Transistors by Using Fluorine Plasma Treatment

Cited by 26 publications

References 10 publications

Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays

Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays

Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

Experimental Investigation of Thermal Annealing and Ferroelectric Capacitor Area Effects for Hafnium-Zirconium Oxide Devices

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