Influence of plasma fluorination on p -type channel tin-oxide thin film transistors

Chen, Po Chun; Chiu, Yi-Wei; Zheng, Zhigang; Cheng, Chun Hu; Wu, Yu‐Feng

doi:10.1016/j.jallcom.2016.11.294

Cited by 39 publications

(27 citation statements)

References 31 publications

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“…Figure 3(a), (b), (c) and (d) show the extracted I on /I off , SS μ FE and N it values of the simulated n-type SnO x TFT devices as a function of the channel trap density. These improvements in the TFT device with the low density of channel traps can be attributed to the low defect-induced current leakage and interface roughness, which agreed with the previous experimental report [18]. Therefore, it is believed that our SnO x TFT device performance can be further optimized by improving the channel and channel/dielectric interface quality with optimal approaches of fabrication process.…”

Section: Resultssupporting

confidence: 89%

“…Therefore, it is imperative to develop bipolar oxide semiconductors like SnO x to allow the fabrication of more compact CMOS devices. We previously have demonstrated p-type SnO x TFT devices using the fluorine plasma treatment on the channel [18]. Base on this approach of channel plasma processing, in this work, we fabricated an n-type SnO x TFT device with oxygen plasma treatment on the channel, which exhibited an on/off current ratio (I on /I off ) of 4.4x10 4 , a high field-effect mobility (μ FE ) of 18.5 cm 2 /V.s and a threshold swing (SS) of 405 mV/decade.…”

Section: Introductionmentioning

confidence: 99%

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Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

Shang

Liu

et al. 2020

IEEE J. Electron Devices Soc.

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In this paper, we investigated the performance of an n-type tin-oxide (SnO x) thin film transistor (TFT) by experiments and simulation. The fabricated SnO x TFT device by oxygen plasma treatment on the channel exhibited n-type conduction with an on/off current ratio of 4.4x10 4 , a high field-effect mobility of 18.5 cm 2 /V.s and a threshold swing of 405 mV/decade, which could be attributed to the excess reacted oxygen incorporated to the channel to form the oxygen-rich n-type SnO x. Furthermore, a TCAD simulation based on the n-type SnO x TFT device was performed by fitting the experimental data to investigate the effect of the channel traps on the device performance, indicating that performance enhancements were further achieved by suppressing the density of channel traps. In addition, the n-type SnO x TFT device exhibited high stability upon illumination with visible light. The results show that the n-type SnO x TFT device by channel plasma processing has considerable potential for next-generation high-performance display application. INDEX TERMS Thin film transistor (TFT), tin-oxide (SnO x), plasma, TCAD.

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Section: Resultssupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

Shang

Liu

et al. 2020

IEEE J. Electron Devices Soc.

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“…The difficulty in changing their properties limits AO device applications, such as logic gate digital circuits. There are only a few p-type AO with electrical properties comparable to n-type, 1 such as Barros et al who prepared a p-type SnO with an oxygen flow of 12.5 sccm, 10 and the p-type SnO was also obtained by using a fluorine plasma treatment, 11 but p-type IGZO is very rare.…”

Section: Introductionmentioning

confidence: 99%

<p>Change Of Nano Material Electrical Characteristics For Medical System Applications</p>

Chen

Zhang

et al. 2019

IJN

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Amorphous nano oxides (AO) are intriguing advanced materials for a wide variety of nanosystem medical applications including serving as biosensors devices with p-n junctions, nanomaterial-enabled wearable sensors, artificial synaptic devices for AI neurocomputers and medical mimicking research. However, p-type AO with reliable electrical properties are very difficult to obtain according to the literature. Based on the oxide thin film transistor, a phenomenon that could change an n-type material into a p-type semiconductor is proposed and explained here. The typical In-Ga-Zn-O material has been reported to be an n-type semiconductor, which can be changed by physical conditions, such as in processing or bias. In this way, here, we have identified a manner to change nano material electrical properties among n-type and p-type semiconductors very easily for medical application like biosensors in artificial skin.

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“…This hysteresis phenomenon can be ascribed to the trap defects near the SnO channel. It is well known that this charge trapping effect is correlated with the interface quality between a vacancy-rich p-type SnO channel and a polycrystalline HZO gate dielectric [24], which affects the transfer characteristic of the p-type TFT. Figure 6b shows the transfer ID-VG curves of the 1T-1C device structure after integrating the ferroelectric HfZrO capacitor and p-type SnO TFT.…”

Section: Resultsmentioning

confidence: 99%

“…For the trapping hysteresis, an NVM has been fabricated using a ZnO TFT with Ag nanoparticles embedded as charge storage nodes at the insulator-ZnO interface [22]. We have previously proposed high-performance tin oxide (SnO) TFTs for display application [23][24][25]. In this work, we fabricated one transistor and one capacitor (1T-1C) device structure integrating a p-type SnO TFT and a ferroelectric HfZrO capacitor and investigated the influence of the thermal annealing and capacitor area.…”

Section: Ofmentioning

confidence: 99%

Experimental Investigation of Thermal Annealing and Ferroelectric Capacitor Area Effects for Hafnium-Zirconium Oxide Devices

Hsu

Lee

2020

Coatings

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In this study, we reveal that the thermal budget of post-metal annealing not only determines the formation of the ferroelectric phase and dipole domain but also the film quality of the gate stack in a metal-ferroelectric-metal capacitor. The higher leakage current caused by defect traps or grain boundaries within a gate stack would influence the stability of the ferroelectric domain switching. Furthermore, the ferroelectric domain switching and polarization current also depend on the ferroelectric capacitor area. We observe that a HfAlO ferroelectric capacitor can dominate the transfer characteristics of a p-type SnO thin-film transistor through the modulation of series capacitance in the gate stack based on a one-transistor one-capacitor series configuration. According to experimental results, the memory hysteresis window can be improved significantly with the area scaling due to the improvement of capacitance matching accuracy.

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Influence of plasma fluorination on p -type channel tin-oxide thin film transistors

Cited by 39 publications

References 31 publications

Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

<p>Change Of Nano Material Electrical Characteristics For Medical System Applications</p>

Experimental Investigation of Thermal Annealing and Ferroelectric Capacitor Area Effects for Hafnium-Zirconium Oxide Devices

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