In the study, ZrOx films were deposited on substrates by the sol–gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence and conductivity measurements were used to characterize the films. The authors found that the displacement current of oxygen-rich ZrOx films was smaller than that of oxygen-deficient ZrOx films. According to the experimental results, the authors suggested that donor-like oxygen-vacancy related and crystallographic defects within the ZrOx film controlled carrier flow and resulted in hysteresis-type current–voltage characteristics of indium tin oxide/ZrOx/Au devices.
In this study, the effect of the incorporation of ZnO nanoparticles into [6,6]-phenyl C61-butyric acid methyl ester (PCBM) on carrier transport of PCBM/p-type Si diodes was examined. Correlation effects were evaluated using the well-known expressions for the thermionic emission and space charge limited current. Rectification behavior is affected by the bulk effects of the PCBM layer. It is shown that the incorporation of ZnO nanoparticles leads to the suppression of trap filling effects of the PCBM layer, resulting in improvement in the electrical and optoelectronic performances for PCBM/p-type Si diodes.
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