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This paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the requirements for the next-generation displays, such as flexibility, transparency, low power consumption, fast response, high efficiency, and operational reliability. After a brief introduction, we first review the research on non-Si-based TFTs using metal oxides, transition metal dichalcogenides, and semiconducting carbon nanotubes as the driving unit of display devices. Next, QLED technologies are analyzed in terms of the device structure, device engineering, and QD patterning technique to realize high-performance, full-color AM-QLEDs. Lastly, recent research on the monolithic integration of TFT–QLED is examined, which proposes a new perspective on the integrated device. We anticipate that this review will help the readership understand the fundamentals, current state, and issues on TFTs and QLEDs for future AM-QLED displays.

Active matrix (AM) quantum‐dot light‐emitting diodes (QLEDs) driven by thin‐film transistors (TFTs) have attracted significant attention for use in next‐generation displays. Several challenges remain for the realisation of AM‐QLEDs, such as device design, fabrication process, and integration between QLEDs and TFTs, depending on their device structures and configurations. Herein, we demonstrate efficient and stable AM‐QLEDs using conventional and inverted structured QLEDs (C‐ and I‐QLEDs, respectively) combined with facile type‐convertible (p‐ and n‐type) single‐walled carbon nanotube (SWNT)‐based TFTs. Based on the four possible configurations of the QLED–TFT subpixel, we compare the performance of the SWNT TFT‐driven QLEDs and the fabrication process to determine the ideal configuration, taking advantage of each structure for AM‐QLEDs. We also optimise the QLEDs and TFTs to maximise the performance of the AM‐QLEDs—the inner shell composition of quantum dots and carrier type of TFTs—resulting in a maximum external quantum efficiency and operational lifetime (at an initial luminance of 100 cd/m2) of 21.2% and 38,100,000 h for the C‐QLED, and 19.1% and 133,100,000 h for the I‐QLED, respectively. Finally, we successfully demonstrate a 5×5 AM‐QLED display array controlled using SWNT TFTs. This study is expected to contribute to the development of advanced AM‐QLED displays.This article is protected by copyright. All rights reserved

The demand for ambipolar organic thin-film transistors (OTFTs) is growing daily owing to their direct applications in single-component organic logic circuits, light-emitting transistors, and other types of integrated circuits. Donor–acceptor...