Progress in the Development of Active-Matrix Quantum-Dot Light-Emitting Diodes Driven by Non-Si Thin-Film Transistors

Abstract

This paper aims to discuss the key accomplishments and further prospects of active-matrix (AM) quantum-dot (QD) light-emitting diodes (QLEDs) display. We present an overview and state-of-the-art of QLEDs as a frontplane and non-Si-based thin-film transistors (TFTs) as a backplane to meet the requirements for the next-generation displays, such as flexibility, transparency, low power consumption, fast response, high efficiency, and operational reliability. After a brief introduction, we first review the research on non-Si-based TFTs using metal oxides, transition metal dichalcogenides, and semiconducting carbon nanotubes as the driving unit of display devices. Next, QLED technologies are analyzed in terms of the device structure, device engineering, and QD patterning technique to realize high-performance, full-color AM-QLEDs. Lastly, recent research on the monolithic integration of TFT–QLED is examined, which proposes a new perspective on the integrated device. We anticipate that this review will help the readership understand the fundamentals, current state, and issues on TFTs and QLEDs for future AM-QLED displays.

Fully solution-processed red tandem quantum dot light-emitting diodes with an EQE exceeding 35%

“…The conventional structure can be manufactured using mature solution processes, resulting in better economic benefits and providing good luminescence efficiency and stability. 7,27 TFB is a commonly used polymer hole-transporting material (HTM) with higher mobility (B10 À3 cm 2 V À1 s À1 ) than other HTMs. Red QLEDs employing TFB as the HTL have demonstrated good performance in the literature with low turn-on voltage and high EQE.…”

Top‐Emitting Quantum Dot Light‐Emitting Diodes: Theory, Optimization, and Application

“…First, to utilize TQLEDs in consumer electronic displays such as televisions or mobile electronics, active matrix (AM) TQLEDs must be investigated. [ 132 ] The AM driving method, which arranges TFT arrays and storage capacitors to control the current of every pixel, offers the advantages of low driving voltage, long operational lifetime, and applicability to high‐resolution displays. In 2011, AM TQLEDs with SVGA resolution (800 × 600 pixels) were developed.…”

Efficient and stable InP quantum-dot light-emitting diodes formed by premixing 2-hydroxyethyl methacrylate into ZnMgO

“…Quantum dot light-emitting diodes (QLEDs) have emerged as highly promising display devices owing to the unique properties of quantum dots (QDs), including high photoluminescence (PL) quantum yield, narrow spectral width, and solution processability. [1][2][3][4] However, a significant obstacle to their commercialization is their inferior lifetime compared to that of previously commercialized technologies. 5,6 In particular, despite the increasing societal demand and regulations for eco-friendliness, the efficiency and lifetime of InP-based QLEDs still lag behind those of their Cd-based counterparts, mainly due to the intrinsic instability of the materials and their easily oxidized nature.…”