Preamorphization of a silicon substrate by Ge+ ion implantation is required for shallow doping of boron, which, in turn, is the key process to realize highly integrated semiconductor devices. However, Ge+ ions have not been stably extracted by conventional methods. Several chemical compounds of germanium, GeO, GeS, GeCl4, and GeF4, were supplied to a microwave ion source and the characteristics of their ion extractions were compared. The conditions for obtaining mass-separated Ge+ ions of more than 1 mA were found.
Precise simulation of ion implantation is a crucial base point of Front End Process (FEP) TCAD. To meet both simulation accuracy target and achieve short turnaround time (TAT), an improved statistical enhancement method has been implemented in Monte Carlo ion implantation simulator. The approach used for statistical enhancement allowed lower lateral doping profile noise comparing to conventional method while using just a fraction of simulation time. The results led to significant TAT reduction for advanced Logic and Memory FEP simulations.
Gigaphoton has developed LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies including; combination of pulsed CO2 laser and Sn droplets, dual wavelength pico second laser pulses for shooting and debris mitigation by magnetic field have been applied 1) . We have demonstrated high average power CO2 laser more than 25kW at output power in cooperation with Mitsubishi Electric 2) . Pilot#1 demonstrated HVM capability; >300W operation data (short-term) and actual collector mirror reflectivity degradation rate is less than 0.15%/Gp 3) by using real collector mirror around 125W (at I/F clean) in burst power > 10 Billion pulses operation 4) . Long-term operation over 270W is also successful. Also we are developing small LPP light source for new application. I will report this new LPP light source at the conference 5)6) .
To understand the laser doping conditions by the KrF excimer laser, a calculation was attempted using a commercially available TCAD (ATLAS by SILVACO). Compared with the experimental results, it was found that the difference occurred at the temperature calculation stage, and the cause was investigated. The factor of the difference is assumed to be that the crystal state of SiC changed (change in regime) due to laser irradiation. So, in addition to the legacy photothermal reaction, a new model was built on TCAD that included state changes due to photochemical reactions. As a result, the calculated and experimental results were more consistent.
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