High-power LPP-EUV source for semiconductor HVM: lithography and other applications

Abstract

Gigaphoton has developed LPP EUV light source which is the most promising solution as the 13.5nm high power light source for HVM EUVL. Unique and original technologies including; combination of pulsed CO2 laser and Sn droplets, dual wavelength pico second laser pulses for shooting and debris mitigation by magnetic field have been applied 1) . We have demonstrated high average power CO2 laser more than 25kW at output power in cooperation with Mitsubishi Electric 2) . Pilot#1 demonstrated HVM capability; >300W operation data (short-term) and actual collector mirror reflectivity degradation rate is less than 0.15%/Gp 3) by using real collector mirror around 125W (at I/F clean) in burst power > 10 Billion pulses operation 4) . Long-term operation over 270W is also successful. Also we are developing small LPP light source for new application. I will report this new LPP light source at the conference 5)6) .

Experimental Study on the Temporal Evolution Parameters of Laser–Produced Tin Plasma under Different Laser Pulse Energies for LPP–EUV Source

“…where, ω is the electron impact parameter, A is the ion broadening parameter, and N D is the number of particles in the Debye sphere. The first term in Equation (11) represents the broadening caused by electron impact, while the second term represents ion broadening.…”

“…A well-performing LPP-EUV source has already been manufactured by ASML and Gigaphoton [11,12]. The EUV lithography machine NXE:3400B produced by ASML requires that the output power at the intermediate focus (IF) of the LPP-EUV source exceed 205 W in actual industrial production in order to meet the production rate of over 125 wafers per hour and effectively reduce costs [13].…”