We developed novel "Micro Silicon" technology for AM-OLED display. The micro crystalline silicon TFTs formed by dLTA (diode Laser Thermal Anneal) system realized uniform and stable current flow in large display area. A 27.3-inch diagonal AM-OLED display was demonstrated to provide applicable solution for OLED TV mass-production.
This paper describes the development of an Al-based thin-film gate structure for use in large, high-resolution active-matrix liquid crystal displays (AMLCDs). Aluminum films are suitable for forming the data lines of such displays, but they are not suitable for forming the gate lines because of the hillock-induced shorts that can occur to overlying metal lines during the heating necessary for insulator deposition. Alloying with yttrium, gadolinium, and neodymium was examined with the aim of reducing hillock and whisker formation during such heating. Although Al films alloyed with 2 at.% of those metals exhibited low hillock densities (10-100 mm""^), the densities were not low enough for the fabrication of SXGA (1280 X 1024 pixels) panels. After investigation of several means to further reduce the formation of hillocks and whiskers, the most effective approach was found to be anodization of the Al-alloy gate lines, suitably patterned for anodization, followed by photoresist application and laser-cutting steps. Illustratively, by use of an anodized Al-Nd (2 at.%) thin-film gate structure, the shortcircuit defect rate and contact defect rate for an 11.3-in.-diagonal experimental SVGA (800 X 600 pixels) display could be effectively reduced to zero.
IntroductionThin-film transistors having an inverted structure (gate beneath) have been studied extensively because of their use in active-matrix liquid crystal displays (AMLCDs) [1,2]. In the 1990s, the panel size and resolution of AMLCDs were increased dramatically, and much effort was devoted to developing low-resistivity gate lines [3-6], The aperture of displays with resolutions higher than SXGA has been significantly reduced by the use of gate alloys such as molybdenum-tantalum or molybdenum-tungsten. To achieve this, low-resistivity films are required (see Tabic 1). As shown in Figure L the use of a conventional MoW alloy with a resistivity of 16.5 /liO-cm results in an aperture ratio of less than 30% for a 12-15-in.-diagonal panel. This is unacceptable for a mobile computer display, because a small aperture requires a bright backlight and consumes a large amount of batterj' power. On the other hand, the use of an aluminum alloy film with a resistivity of 6 /j,ft-cm results in an aperture of more than 50% for a
We have developed a novel fabrication process for self‐aligned top‐gate oxide thin film transistors (TFTs) that are suitable for high‐resolution and high‐speed driving in display applications. In the proposed process, the aluminum oxide (AlO) layer is sputtered onto a low‐resistance oxide semiconductor film using the top‐gate electrode as a mask to allow the low‐resistance oxide semiconductor region to be selectively maintained as a source/drain region. Because the AlO layer that is formed by the sputtering method offers high barrier performance against impurity diffusion, both high uniformity and high reliability of the oxide TFT are realized. In addition, the developed technology can easily be expanded to enable large substrate fabrication with high productivity. A 12‐in full high‐definition organic light‐emitting diode (OLED) display that was driven by the proposed AlO‐barriered self‐aligned top‐gate TFT backplane was shown to provide a solution that was applicable to OLED displays. The technology developed in this work is useful for manufacturing of oxide TFT backplanes for OLED displays, which are required to have both high uniformity and high reliability.
We developed channel-dimension-scalable oxide TFT technology. To provide scalability, AlO sputtered self-aligned source/drain, shield metal and AlO passivation structures were introduced. High reliability achieved by trap reduction using an undercoat offered display lifetimes of >10 years and gate driver integration. A 352ppi printed organic-light-emitting diode display demonstrated the technology's practicality.
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