23‐4: Channel‐Dimension‐Scalable Oxide Thin‐Film Transistor for High‐Resolution Pixel and Integrated Gate Driver

Abstract

We developed channel-dimension-scalable oxide TFT technology. To provide scalability, AlO sputtered self-aligned source/drain, shield metal and AlO passivation structures were introduced. High reliability achieved by trap reduction using an undercoat offered display lifetimes of >10 years and gate driver integration. A 352ppi printed organic-light-emitting diode display demonstrated the technology's practicality.

41‐1: Invited Paper: Recent Technology of Printed OLED Display and Its World's First Commercialization

“…At present, medium-sized OLED panels can only be manufactured by printing methods. Figure 13 shows an image of the prototype OLED display [3]. The possibility of high resolution patterning of RGB by printing process for RGB patterning is confirmed.…”

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlOx Interlayer

“…To block the exchange of metal ions, H, H 2 O, and O between a-IGZO and interlayer, AlO x layer was used on a-IGZO because it is an excellent diffusion barrier for H and O. [33][34][35][36] As shown in Figure S4, Supporting Information, the addition of the ZAO layer could not improve the UV photoconductivity, but it shows a much smaller recovery time constant compared with the data reported for the behavior of photocurrent during and after illumination for a-IGZO TFTs. [37] Therefore, the a-IGZO TFT with a ZAO interlayer can also be applied as photosensors.…”

“…10.4 À1.3 9.8 0.5 2016 [54] AlO x /Organic insulator (Sputtering) 10 À0.2 11 0.13 2018 [33] AlO x /SiO x /AlO x (Sputtering) 3 %À1 -0.3 2019 [34] ZAO/SiO 2 (Spray)…”

“…The ZAO layer can act as a diffusion barrier for H, H 2 O, and O into a-IGZO and also block the interdiffusion of metal ions between a-IGZO and SiO 2 layers. To block the exchange of metal ions, H, H 2 O, and O between a-IGZO and interlayer, AlO x layer was used on a-IGZO because it is an excellent diffusion barrier for H and O [33][34][35][36]. As shown in FigureS4, Supporting Information, the addition of the ZAO layer could not improve the UV photoconductivity, but it…”