“…Several technologies, including solid-phase crystallization, excimer laser crystallization, and metal-induced crystallization, could be employed to produce high-quality poly-Si with larger grain size, lower grain boundary energy, and higher carrier mobility [1][2][3]. However, these technologies represent several limitations, such as long annealing time, poor uniformity due to the scan overlap of laser shots and the incorporation of metal atoms in poly-Si, respectively [4][5][6]. In addition, the process temperature for crystallization of a-Si should be lower than 550 1C to prevent the softening of glass substrates.…”