The effects of adding Zr into solution-processed InZnO (IZO) thin-film transistors (TFTs) were investigated with varying Zr content. ZrInZnO (ZIZO) TFTs showed a lower off-current and a sharper subthreshold swing than IZO TFTs. The addition of Zr plays a role in reducing the oxygen vacancies, and thus effectively decreases the carrier concentrations of the ZIZO active layer. The characteristics of various DC bias stresses are provided and discussed to evaluate the reliability of ZIZO TFTs. After 1000 s of various DC bias stresses, although the threshold voltage may shift dramatically, variations in subthreshold swing are negligible.
We propose a new crystallization technique called selective area heating. In this study, we investigated a new technique for high-reliability selective area crystallization of a-Si films that does not cause thermal damage to glass substrates. We reduced the crystallization time as compared to the conventional solid phase crystallization method using a stamp-type isolated thin heater. The thin heater was fabricated with a layer of Pt on a quartz substrate via Ta adhesion and capping layers. A crystalline transverse optic phonon peak at about 519 cm À1 was seen in Raman scattering spectra, showing that the films were crystallized. The poly-Si grain size was found to be smaller than 100 nm, and the dendritic structure was found using scanning electron microscopy.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.