Study on the Effects of Zr-Incorporated InZnO Thin-Film Transistors Using a Solution Process

Jeong, Tae Hoon; Kim, Si Joon; Yoon, Dae Ho; Jeong, Woong Hee; Kim, Dong Lim; Lim, Hyun Kyoung; Kim, Hyun Jae

doi:10.7567/jjap.50.070202

Cited by 12 publications

(4 citation statements)

References 13 publications

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“…Recently, InO x -based amorphous oxide semiconductors such as In 2 O 3 , 7,8 InZnO, 9,10 Sn-InZnO, 11 Hf-InZnO, 12,13 Si-InZnO, 3,14 Zr-InZnO, 15,16 InGaZnO (IGZO), 17 InWO, 18 and InSiO 19,20 have been investigated in low-temperature processes to improve device performance. Because Zn-containing oxide semiconductors are sensitive to moisture in the atmosphere, 21 a ZnO-based TFT that is fabricated at a low temperature is difficult to use in stable operation.…”

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confidence: 99%

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

et al. 2014

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confidence: 99%

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

et al. 2014

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“…11,12) Several studies have demonstrated that the incorporation of low-standard-electrode-potential (SEP) materials such as Mg, Zr, and Hf into IZO thin films can efficiently suppress oxygen-vacancy formation and reduce oxygen deficiencies, thereby improving the electrical performance and enhancing the bias stability of oxide thin-film transistors (TFTs). [13][14][15][16][17][18] Mg has a lower SEP (−2.37 V) 13) than Zr (−1.45 V) 15) and Hf (−1.70 V). 17) A lower SEP indicates that the material more easily ionizes and combines strongly with oxygen.…”

Section: Introductionmentioning

confidence: 98%

Incorporation of sol–gel-derived Mg into InZnO semiconductor thin films for metal–semiconductor–metal ultraviolet photodetectors

Tsay¹,

Wu²

2017

Jpn. J. Appl. Phys.

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We incorporated Mg into InZnO (MIZO) semiconductor thin films and fabricated metal–semiconductor–metal (MSM) UV photodetectors by the sol–gel method. The effects of incorporating Mg into IZO films on the electrical and UV photoresponse properties were investigated and photoconductive UV detectors were realized using IZO-based films. The Mg content ([Mg]/[In + Zn]) was varied from 0 to 20% in the resultant solutions. Each as-coated sol–gel film was preheated at 300 °C for 10 min and annealed at 450 °C for 2 h to form dense oxide films. Results showed that all as-prepared IZO-based films had an amorphous phase structure, displayed a flat surface, and exhibited a high visible transmittance (≥90.0%). We found that UV light illumination increased the photocurrents in all IZO-based films, and that MIZO photodetectors exhibited better photocurrent generation than pure IZO photodetectors. The 20% Mg-doped IZO photodetectors exhibited the highest Ilight-to-Idark ratio (8.57) and the highest percentage of sensitivity (756.9).

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“…The Zr in IGZO can act as a carrier suppressor; Zr 4+ ions substituted into the In 3+ ion sites can work as oxygen binders, therefore suppressing the formation of oxygen vacancies. [ 45–48 ]…”

Section: Resultsmentioning

confidence: 99%

“…The Zr in IGZO can act as a carrier suppressor; Zr 4þ ions substituted into the In 3þ ion sites can work as oxygen binders, therefore suppressing the formation of oxygen vacancies. [45][46][47][48] Figure 5c shows the map of the elemental distribution in the SiO 2 / ZAO/ a-IGZO/ buffer-SiO 2 . The results are consistent with the EDS mapping data, indicating the uniform distribution of the elements.…”

Section: Resultsmentioning

confidence: 99%

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO_x Interlayer

Lee

Islam

et al. 2021

Adv Eng Mater

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The short channel coplanar amorphous indium gallium zinc oxide (a‐IGZO) thin‐film transistor (TFT) is reported by introducing a ZrAlO x (ZAO) interlayer deposited by spray pyrolysis at the substrate temperature of 350 °C. The atomic ratio (at. %) of In:Ga:Zn:O is 1:2.5:1.2:5.2 in the a‐IGZO film deposited by sputtering. The a‐IGZO TFT with ZAO layer with 0.87 μm channel length exhibits the field‐effect mobility of 6.44 cm2 V−1 s−1, the threshold voltage of −2.16 V, and on/off current ratio of 7.6 × 107. It is found from the X‐ray photoelectron spectroscopy depth profile and high‐resolution transmission electron microscope analysis that some Zr atoms diffuse into the a‐IGZO underlayer. The formation of ZrO bonds on a‐IGZO surface region reduces the carrier concentration in the a‐IGZO TFT offset region, between source/drain contact and the channel, and blocks the carrier diffusion into the channel. This reduces the field‐effect mobility of 10 μm channel length TFT from 21.86 to 14.01 cm2 V−1 s−1, but the ZAO layer protects the a‐IGZO from the diffusion of H2O and O2. As a result, 0.87 μm TFT shows high on/off current ratio and stable under 85 °C and 85% relative humidity test for 2 days.

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Study on the Effects of Zr-Incorporated InZnO Thin-Film Transistors Using a Solution Process

Cited by 12 publications

References 13 publications

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Incorporation of sol–gel-derived Mg into InZnO semiconductor thin films for metal–semiconductor–metal ultraviolet photodetectors

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO_x Interlayer

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Study on the Effects of Zr-Incorporated InZnO Thin-Film Transistors Using a Solution Process

Cited by 12 publications

References 13 publications

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability

Incorporation of sol–gel-derived Mg into InZnO semiconductor thin films for metal–semiconductor–metal ultraviolet photodetectors

Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlOx Interlayer

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Improvement of Thermal and Environmental Stabilities of Short Channel Coplanar Amorphous InGaZnO Thin‐Film Transistors by Introducing Amorphous ZrAlO_x Interlayer