A radiation detector was fabricated with an epitaxially grown InSb crystal. The resistivity of the epitaxial crystal was 1.5 orders of magnitude higher than that of substrate crystal, on the other hand, the Hall mobility was smaller. The resistance of the InSb detector showed highest value among the previously fabricated ones. Pulses induced by alpha particles were observed, however, proper energy spectrum was not obtained, due to the poor charge collection brought by the small Hall mobility.
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